Workshop Programme
Sunday, October 15
19.30–20.00
Registration
20.00
Glass of wine, Qubus Hotel
Monday, October 16
8.30–9.00
Registration
9.00–9.10
Opening
9.10–9.40
Johann Peter Reithmaier
1.5 µm InP-based quantum dot lasers for high bit rate telecom applications
9.40–10.10
Il-Sug Chung
Micro-cavity lasers based on high-contrast gratings
10.10–10.30
Break
10.30–11.00
Dr. Thomas Wunderer
E-beam pumped edge-type emitting UV lasers
11.00–11.20
Jens W. Tomm
Catastrophic Optical Damage of GaN-based diode lasers: Sequence of Events, Damage Pattern, and Comparison with GaAs-based Devices
11.20–11.40
Break
11.40–12.00
Szymon Stańczyk
(Al,In)GaN optical amplifiers
12.00–12.20
Witold Trzeciakowski
Laser sources for dermatological applications
12.20–14.00
Lunch
14.00–14.20
Ryszard Piramidowicz
Generic technologies of integrated photonics
14.20–14.40
Anna Jusza
InP-based integrated transceivers for fiber-optic access systems
14.40–15.00
Break
15.00–15.20
Andrzej Kaźmierczak
Integrated read-out unit for fiber-optic sensor network
15.20–15.40
Stanisław Stopiński
Optical gyroscopes in generic technology on InP platform
15.40–16.00
Break
16.00–16.20
Marcin Motyka
Carrier dynamics in type I InGaSb/GaSb and type II InAs/GaIn(As)Sb/AlSb quantum wells
16.20–16.40
Grzegorz Sęk
Novel solutions in the active region of interband cascade lasers
16.50–18.00
Poster Session
Tuesday, October 17
9.30–10.00
Hermann Kahle
Membrane External-Cavity Surface-Emitting Lasers (MECSELs) - From Infrared to Red, Orange, Yellow and Beyond
10.00–10.20
Jan Muszalski
Double diamond enclosure of Vertical External Cavity Surface Emitting Laser - a new way to new spectral ranges
10.20–10.40
Artur Broda
Semiconductor Disk Lasers with Two-Resonance Microcavity – improvement of wavelength tuning range
10.40–11.00
Break
11.00–11.30
James A. Lott
Simplicity VCSELs
11.30–11.50
Nasibeh Haghighi
Bandwidth versus oxide aperture diameter for 980 nm Simplicity VCSELs
11.50–12.10
Break
12.10–12.30
Szymon Grzanka
Quantum confined Stark effect and reliability of the nitride near ultraviolet lasers
12.30–12.50
Anna Kafar
Quantum Confined Stark Effect screening under high carrier injection in nitride laser diodes and superluminescent diodes
12.50–14.30
Lunch
14.30–14.50
Magdalena Marciniak
VCSELs incorporating High Contract Gratings as one-device sensor
14.50–15.10
Marta Więckowska
Antiresonant reflecting optical waveguide VCSEL with oxide island
15.10–15.30
Break
15.30–16.00
Dan Cohen
Tunnel Junctions for III-Nitride VCSELs and High Efficiency Edge Emitting Lasers
16.00–16.20
Czesław Skierbiszewski
Nitride laser diodes with tunnel junctions by plasma assisted MBE
16.20–16.40
Tomasz Czyszanowski
Monolithic nitride-based VCSEL with semiconductor-metal subwavelength grating
19.00–24.00
Dinner
Wednesday, October 18
10.00–10.30
Ji Hye Kang
DFB laser diodes based on GaN using 10th order laterally coupled surface gratings
10.30–10.50
Grzegorz Muzioł
Nitride-based laser diodes with extremely long lifetime grown by plasma assisted molecular beam epitaxy
10.50–11.10
Agata Bojarska
Optimization of Electron Blocking Layer design for nitride laser diodes
11.40–11.30
Break
11.30–11.50
Kamil Pierściński
Limitations of high duty-cycle operation of InP-based QCLs
11.50–12.10
Piotr Gutowski
Growth of InAlAs/InGaAs/InP Quantum Cascade Lasers by MBE and MBE+MOVPE Hybrid Approach
12.10–12.30
Grzegorz Sobczak
Influence of the thermal annealing of the strain-compensated AlInAs/GaInAs/InP heterostructure on the properties of quantum cascade lasers
12.30–12.50
Break
12.50–13.20
Erik Haglund
Wavelength Control of VCSELs using High-Contrast Gratings
13.20–13.40
Marcin Gębski
Monolithic Subwavelength Grating
13.40–14.00
Maciej Dems
What about Monolithic High-Contrast Gratings
14.00
Lunch