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  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
     10.1088/0022-3727/34/6/317 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Modeling of Radial Steam Oxidation of AlAs Layers in Cylindrically Symmetric Mesa Structures of Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 289-299, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • P. Maćkowiak, W. Nakwaski, Some Aspects of Designing Efficient Nitride VCSEL Resonator, J. Phys. D: Appl. Phys. 34, 954-958, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A Novel Diagonal-Current-Injection VCSEL Design Proposed for Nitride Lasers, Semicond. Sci. Technol. 16, 598-602, 2001
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photon. Technol. Lett. 13, 687-689, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • W. Nakwaski, Optical Fields in Complex Multilayered Structures of Modern Semiconductor Optoelectronic Devices, Opto-Electron. Rev. 9, 269-273, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001
  • T. Czyszanowski, Method of Effective Index and Method of Lines for the Analysis of Optical Phenomena in the Edge Emitting (in-Plane) Diode Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 21, 31-38, 2001
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
  • W. Nakwaski, Modeling of Optical Fields in Complex Multilayered Semiconductor Structures with a Vertical-Cavity Surface-Emitting Laser (VCSEL) As An Example, Polish Academy of Sciences, 14th School on Optoelectronics: "Photonics in Information Processing", pp. 113-121, November 2000
  • A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Simulation of Semiconductor Lasers for Optimization of Their Structures for Various Wavelengths of the Output Radiation, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar THERMIC'2000, pp. 40-46, October 2000
  • T. Czyszanowski, Possible Optimization of Arsenide Diode Lasers for Their Operation at Elevated Temperatures, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar, THERMIC 2000, pp. 27-33, October 2000
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, Novel Design Proposed for Nitride VCSELs, International Workshop on Nitride Semiconductors, IWN2000, pp. 889-891, September 2000