Modeling novel VCSEL structures manufactured using intra-cavity selective planar oxidation for high-power single-mode emission

Research project objectives

The purpose of this project is to investigate the influence of oxide forms of anti-resonant structures located inside the Vertical-Cavity Surface-Emitting Lasers (VCSEL) on their physical properties. One of the methods to provide a single transverse mode operation is an application of anti-resonant waveguides (ARROW) etched on the surface of the laser. However, their effectiveness is limited because of the low light intensity on the mirror surface. Therefore, the inclusion of an anti-resonant layers inside the resonant cavity should provide a much more efficient elimination of higher order modes.

This project will focus on using computer simulation to investigate the influence of buried ARROW structures on the optical, electrical, and thermal properties of lasers. These studies will help to understand the physics of these new structures, which in the future will enable the development and optimization of new generation single-mode high-power lasers.

Obtained numerical results will be compared with the experimental data that will be provided by the research group from the Laboratory for Analysis and Architecture of Systems (LAAS-CNRS), which has a novel technology that allows to perform selective oxidation of any shape inside of the laser structures including buried ARROW structures.

Research methodology

Proposed research project — in the part implemented by the Technical University of Lodz --- is to be realized by performing theoretical analysis that will be conducted using advanced self-consistent computer model developed by the Photonics Group in the Institute of Physics at Lodz University of Technology. This model consists of several basic modules for the calculation of the heat propagation, the band structure of the active region, material gain, current distribution and transport phenomena and optical media. The modules are mutually compatible and they can be freely combined, thus forming a package for performing simulations of various types of semiconductor devices. Application of numerical analysis to the study of semiconductor lasers has the advantage that it allows consideration of the of individual phenomena in the laser in separation from other effects that hinder proper interpretation of test results. Inclusion of selected relations within individual modules and links between them, allows to pinpoint the physical phenomena responsible for the observed effects.

Research project impact

Using ARROW structures is one of the methods to increase the mode selectivity of lasers, and therefore, to obtain a single-transverse-mode high-power emission. Placing such structure within the laser resonant cavity will strongly increase the light-matter interaction, as compared to classical surface etching. This project will result in a thorough understanding of the physics of the phenomena occurring in such structures. It will enable the successful design of new generation of single-mode VCSELs. This will be an excellent starting point for further applied research, aimed at creating a single-mode high power laser with excellent quality, for use e. g. in the field of optical communications.