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  • R. Sarzała, Optimization of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22, 113-118, 2007
  • R. Sarzała, W,, Nakwaski,, GaInNAsSb/GaNAs Quantum-Well VCSELs: Modeling and Physical Analysis in the 1.50-1.55 μm Wavelength Range, J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers., Physica Status Solidi (A) Applications and Materials 204 No. 10, 3562-3573, 2007
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: modeling and physical analysis in the 1.50 – 1.55 μm wavelength range., J. Appl. Phys. 101, 073103, 2007
  • R. Sarzała, Optimization of oxide-confined vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(2), 113-118, 2006
     10.1088/0268-1242/22/2/019 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high-power diode laser bars, Appl. Phys. Lett. 89(26), 263506, 2006
     10.1063/1.2424644 
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure, J. Appl. Phys. 99(12), 123110, 2006
     10.1063/1.2206129 
  • R. Sarzała, W. Nakwaski, Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region, Opt. Quant. Electron. 38(4-6), 293-311, 2006
     10.1007/s11082-006-0030-9 
  • R. Sarzała, W. Nakwaski, Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities, Opt. Quant. Electron. 38(4-6), 325-337, 2006
     10.1007/s11082-006-0035-4 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high- power diode laser bars., Appl. Phys. Lett. 89, 263506, 2006
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure., J. Appl. Phys. 99 s.123110-1(9), 2006
  • R. Sarzała, Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 275-283, 2005
     10.1007/s00339-005-3251-z 
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified k·p method to investigate polarization effects in nitride quantum-well devices, Physica E: Low-Dimensional Systems and Nanostructures 25(4), 504-514, 2005
     10.1016/j.physe.2004.08.002 
  • R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005
  • R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005
  • R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004
     10.1049/ip-opt:20040936 
  • R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004
     10.1109/JQE.2004.828228 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004
     10.1088/0268-1242/19/8/008 
  • R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004
     10.1023/B:OQEL.0000019967.68715.3d