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  • D. Xu, C. Tong, S. F. Yoon, W. Fan, D. H. Zhang, M. Wasiak, Ł. Piskorski, K. Gutowski, R. Sarzała, W. Nakwaski, Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication, Semicond. Sci. Technol. 24(5), 055003, 2009
     10.1088/0268-1242/24/5/055003 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication, Opto-Electron. Rev. 17(3), 217-224, 2009
     10.2478/s11772-008-0067-3 
  • A. Pabjańczyk, R. Sarzała, M. Wasiak, M. Bugajski, Kwantowe lasery kaskadowe - podstawy fizyczne, Elektronika : konstrukcje, technologie, zastosowania 2009(nr 5), 30-43, 2009
  • A. Wójcik-Jedlińska, M. Wasiak, K. Kosiel, M. Bugajski, Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology, Opt. Appl. 39, 967-974, 2009
  • K. Kosiel, M. Bugajski, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, J. Muszalski, A. Łaszcz, P. Romanowski, M. Wasiak, W. Nakwaski, I. Makarowa, P. Perlin, 77K operation of AlGaAs/GaAs quantum cascade laser at 9 um, Photonics Letters of Poland 1(no 1), 16-18, 2009
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs, Opt. Commun. 281(11), 3163-3170, 2008
     10.1016/j.optcom.2008.02.011 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
     10.1109/JQE.2007.904492 
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers, Physica Status Solidi (A) Applications and Materials 204(10), 3562-3573, 2007
     10.1002/pssa.200622559 
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used To Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43, 1041-1047, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers., Physica Status Solidi (A) Applications and Materials 204 No. 10, 3562-3573, 2007
  • M. Wasiak, M. Bugajski, W. Nakwaski, Envelope function description of quantum cascade laser electronic states., Opt. Appl. 35, 651-654, 2005
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004
     10.1088/0268-1242/19/8/008 
  • R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004
     10.1023/B:OQEL.0000019967.68715.3d 
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004
     10.1007/s00339-003-2195-4 
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation Kinetics of AlAs and (AlGa)As Layers in Arsenide-Based Diode Lasers: Comparative Analysis of Available Experimental Data, Semicond. Sci. Technol. 19, 333-341, 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003
     10.1007/s00339-003-2131-7 
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. O. ski, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data, Semicond. Sci. Technol. 19(3), 333-341, 2003
     10.1088/0268-1242/19/3/007 
  • P. Maćkowiak, R. P. S. a, M. Wasiak, W. Nakwaski, Radial optical confinement in nitride VCSELs, J. Phys. D: Appl. Phys. 36(17), 2041-2045, 2003
     10.1088/0022-3727/36/17/303