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  • M. Dems, P. Beling, M. Gębski, Ł. Piskorski, M. Kuc, M. Wasiak, R. Sarzała, Automated self-consistent approach to modeling of photonic devices, International Conference on Transparent Optical Networks, 2013
  • R. Sarzała, T. Czyszanowski, M. Wasiak, M. Dems, Ł. Piskorski, W. Nakwaski, K. Panajotov, Numerical Self-Consistent Analysis of VCSELs, Advances in Optical Technologies 2012, 1-17, 2012
     10.1155/2012/689519 
  • R. Sarzała, Ł. Piskorski, P. Szczerbiak, R. Kudrawiec, W. Nakwaski, An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers, Applied Physics A: Materials Science and Processing 108(3), 521-528, 2012
     10.1007/s00339-012-6977-4 
  • Ł. Piskorski, Computer simulation of an operation of the 1.3-µm phosphide-based MQW TJ-VCSELs: excitation of various transverse LP<inf>ij</inf> modes, 2011 13th International Conference on Transparent Optical Networks, Sweden, 26-30 Jun 2011
     10.1109/ICTON.2011.5971175 
  • P. Kowalczewski, M. Kuc, Ł. Piskorski, R. Sarzała, W. Nakwaski, Simulation of an operation of zinc oxide light-emitting diodes, Microw. Opt. Techn. Let. 53(9), 2086-2090, 2011
     10.1002/mop.26175 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication, Opto-Electron. Rev. 19(3), 320-326, 2011
     10.2478/s11772-011-0026-2 
  • P. Kowalczewski, M. Kuc, Ł. Piskorski, R. Sarzała, W. Nakwaski, Model diody elektroluminescencyjnej z ZnO, Elektronika : konstrukcje, technologie, zastosowania 2011(nr 9), 76-78, 2011
  • R. Sarzała, Ł. Piskorski, Comparative analysis of lasing performance of oxide-confined and proton-implanted vertical-cavity surface-emitting diode lasers, Applied Physics A: Materials Science and Processing 102(2), 359-366, 2010
     10.1007/s00339-010-5992-6 
  • Ł. Piskorski, A comparative study of temperature sensitivity of 1.3-µm In(Ga)AsP/InGaAsP multiple quantum-well vertical-cavity surface-emitting diode lasers, 2010 12th International Conference on Transparent Optical Networks, Germany, 27 Jun-01 Jul 2010
     10.1109/ICTON.2010.5549298 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs, Applied Physics A: Materials Science and Processing 98(3), 651-657, 2009
     10.1007/s00339-009-5459-9 
  • D. Xu, C. Tong, S. F. Yoon, W. Fan, D. H. Zhang, M. Wasiak, Ł. Piskorski, K. Gutowski, R. Sarzała, W. Nakwaski, Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication, Semicond. Sci. Technol. 24(5), 055003, 2009
     10.1088/0268-1242/24/5/055003 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication, Opto-Electron. Rev. 17(3), 217-224, 2009
     10.2478/s11772-008-0067-3 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Performance Characteristics of GaAs-Based Oxide-Confined In(Ga)As/GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Diode Lasers, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Jun 2008
     10.1109/ICTON.2008.4598618 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs, Opt. Commun. 281(11), 3163-3170, 2008
     10.1016/j.optcom.2008.02.011 
  • D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, <title>Analysis of facet heating in semiconductor lasers</title>, SPIE Proceedings, Ukraine, 12-17 Sep 2005
     10.1117/12.793319 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes, Microelectr. J. 39(3-4), 638-640, 2008
     10.1016/j.mejo.2007.07.049 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures, Opto-Electron. Rev. 16(1), 34-41, 2008
     10.2478/s11772-007-0027-3 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: excitation of various transverse LPij modes, Microelectr. J. No.39(3-4), 638-640, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008