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  • D. Xu, C. Tong, S. F. Yoon, W. Fan, D. H. Zhang, M. Wasiak, Ł. Piskorski, K. Gutowski, R. Sarzała, W. Nakwaski, Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication, Semicond. Sci. Technol. 24(5), 055003, 2009
     10.1088/0268-1242/24/5/055003 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication, Opto-Electron. Rev. 17(3), 217-224, 2009
     10.2478/s11772-008-0067-3 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Performance Characteristics of GaAs-Based Oxide-Confined In(Ga)As/GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Diode Lasers, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Jun 2008
     10.1109/ICTON.2008.4598618 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs, Opt. Commun. 281(11), 3163-3170, 2008
     10.1016/j.optcom.2008.02.011 
  • D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, <title>Analysis of facet heating in semiconductor lasers</title>, SPIE Proceedings, Ukraine, 12-17 Sep 2005
     10.1117/12.793319 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes, Microelectr. J. 39(3-4), 638-640, 2008
     10.1016/j.mejo.2007.07.049 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures, Opto-Electron. Rev. 16(1), 34-41, 2008
     10.2478/s11772-007-0027-3 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: excitation of various transverse LPij modes, Microelectr. J. No.39(3-4), 638-640, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
     10.1109/JQE.2007.904492 
  • Ł. Piskorski, The Influence of Temperature Changes on An Operation of the GaInP/AlGaInP Vertical-Cavity Surface-Emitting Diode Laser, Microtherm 2007: VII Conference Thermal Problems in Electronics, June 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Thermal Properties of the 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, Fifth International Conference on Solid State Crystals \& Eight Polish Conference on Crystal Growth – ICSSC-5 \& PCCG-8 Conference, May 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(6), 593-600, 2007
     10.1088/0268-1242/22/6/002 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Advanced Computer Simulation of the 650-nm Room-Temperature Continuous-Wave Operation of the GaInP/AlGaInP QW VCSEL, The Sixth International Conference on Low Dimensional Structures and Devices, LDSD2007, April 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Mode Selectivity of 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, International Workshop on PHysics \& Applications of SEmiconductor LASERs, March 2007
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Simulation and Optimization of 1.3-μm Oxide-Confined Quantum-Dot Vertical-Cavity Surface-Emitting Lasers, polsko-singapurska konferencja, February 2007
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used To Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43, 1041-1047, 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-Consistent Model of the 650-nm GaInP/AlGaInP Quantum-Well Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22 (6), 593-600, 2007
  • D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, Analysis of Facet Heating in Semiconductor Lasers, Proceedings of SPIE/Ukraine, vol. 6 (1-6), 2006, pp. 6 - 76–82, September 2005