Clear filters
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure Optimization of 1.3-μm (GaIn)(NAs)/GaAs in-Plane Lasers, IEEE Proc. Optoelectr. 150, 56-58, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Performance Characteristics of GaInNAs Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 150, 83-85, 2003
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output Power Saturation in InAs/GaAs Quantum Dot Lasers, Phys. Stat. Sol., 1351-1354, 2003
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher‐Order Transverse Modes in Possible Nitride VCSELs, Physica Status Solidi C - Conferences, 48-51, 2002
     10.1002/pssc.200390095 
  • P. Maćkowiak, M. Wasiak, T. Czyszanowski, R. Sarzała, W. Nakwaski, Designing Guidelines for Nitride VCSELs Resonator, Opt. Appl. 32, 493-502, 2002
  • M. Wasiak, M. Bugajski, E. Machowska-Podsiadło, T. J. Ochalski, J. Kątcki, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, J. . Chen, U. Oesterle, A. Fiore, M. Ilegems, Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots, Opt. Appl. 32, 291-299, 2002
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher-Order Transverse Modes in Possible Nitride VCSELs, Phys. Stat. Sol., 48-51, 2002
  • T. Czyszanowski, M. Wasiak, P. Maćkowiak, R. Sarzała, W. Nakwaski, Method of Lines - the New Vectorial Approach To Optical Phenomena in Diode Lasers, Opt. Appl. 32, 477-484, 2002
  • T. Czyszanowski, W. Nakwaski, How many quantum wells in nitride lasers?, J. Phys. D: Appl. Phys. 34(15), 2346-2352, 2001
     10.1088/0022-3727/34/15/314 
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001
  • T. Czyszanowski, Method of Effective Index and Method of Lines for the Analysis of Optical Phenomena in the Edge Emitting (in-Plane) Diode Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 21, 31-38, 2001