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  • T. Czyszanowski, M. Wasiak, P. Maćkowiak, R. Sarzała, W. Nakwaski, Method of Lines - the New Vectorial Approach To Optical Phenomena in Diode Lasers, Opt. Appl. 32, 477-484, 2002
  • R. Sarzała, Computer Simulation of Performance Characteristics of (GaIn)(NAs) Diode Lasers, Opt. Appl. 32, 449-460, 2002
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
     10.1016/S0010-4655(01)00238-7 
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures, IEEE Photon. Technol. Lett. 13(7), 687-689, 2001
     10.1109/68.930415 
  • T. Czyszanowski, W. Nakwaski, How many quantum wells in nitride lasers?, J. Phys. D: Appl. Phys. 34(15), 2346-2352, 2001
     10.1088/0022-3727/34/15/314 
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A novel diagonal-current injection VCSEL design proposed for nitride lasers, Semicond. Sci. Technol. 16(7), 598-602, 2001
     10.1088/0268-1242/16/7/313 
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
     10.1088/0022-3727/34/6/317 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Modeling of Radial Steam Oxidation of AlAs Layers in Cylindrically Symmetric Mesa Structures of Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 289-299, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • P. Maćkowiak, W. Nakwaski, Some Aspects of Designing Efficient Nitride VCSEL Resonator, J. Phys. D: Appl. Phys. 34, 954-958, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A Novel Diagonal-Current-Injection VCSEL Design Proposed for Nitride Lasers, Semicond. Sci. Technol. 16, 598-602, 2001
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photon. Technol. Lett. 13, 687-689, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • W. Nakwaski, Optical Fields in Complex Multilayered Structures of Modern Semiconductor Optoelectronic Devices, Opto-Electron. Rev. 9, 269-273, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001