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  • W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds, Physica B: Condensed Matter 210(1), 1-25, 1995
     10.1016/0921-4526(94)00921-H 
  • R. Sarzała, W. Nakwaski, M. Osiński, Effects of Carrier Diffusion on Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers (invited Paper), Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 583-604, 1995
  • M. Osiński, W. Nakwaski, Optimization of 1.3-μm Etched-Well Surface-Emitting Laser Design, Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 372-383, 1995
  • W. Nakwaski, Effective Masses of Electrons and Heavy Holes in GaAs, InAs, AlAs and Their Ternary Compounds, Physica B 210, 1-25, 1995
  • W. Nakwaski, Current Spreading and Series Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Appl. Phys. A: Mat. Sci. \& Process. 61, 123-127, 1995
  • W. Nakwaski, R. Sarzała, M. Osiński, Computer Simulation of Vertical-Cavity Surface-Emitting Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 15, 145-158, 1995
  • W. Nakwaski, M. Osiński, Current-Spreading in Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 119-127, 1995
  • W. Nakwaski, M. Osiński, Series Electrical Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 129-137, 1995
  • R. Sarzała, Finite-Element Thermal Model for Monolithic Linear Arrays of GaAs-AlGaAs Strip-Buried-Heterostructure Diode Lasers, Electron Technology 28, 293-299, 1995
  • R. Sarzała, W. Nakwaski, Finite-element thermal model for buried-heterostructure diode lasers, Opt. Quant. Electron. 26(2), 87-95, 1994
     10.1007/BF00558144 
  • W. Nakwaski, M. Osiński, Self-Consistent Thermal-Electrical Modeling of Proton-Implanted Top-Surface-Emitting Semiconductor Lasers (invited Paper), Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 365-387, 1994
  • M. Osiński, W. Nakwaski, P. Varangis, Analysis of Current Spreading and Series Resistance in GaAs/AlGaAs Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 388-396, 1994
  • M. Osiński, W. Nakwaski, A. Leal, Effective Thermal Conductivity Analysis of Vertical-Cavity Top-Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Proc. SPIE 2147 (Vertical-Cavity Surface-Emitting Arrays), 85-96, 1994
  • W. Nakwaski, M. Osiński, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors, IEEE J. Quantum. Electron. 29(6), 1981-1995, 1993
     10.1109/3.234461 
  • M. Osiński, W. Nakwaski, Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasers, pp. 1015-1016, May 1993
     10.1049/el:19930677 
  • W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992
     10.1063/1.107974 
  • W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, pp. K47-K49, July 1992
     10.1002/pssa.2211320136 
  • R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, pp. 1447-1462, June 1992
     10.1007/BF01975077 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 491-500, 1992
     10.1002/pssa.2211290219 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 501-508, 1992
     10.1002/pssa.2211290220