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  • W. Kucharczyk, F. C. Alvarado, P. Górski, R. Ledzion, The effective bond charge in alkali halides — another manifestation of the crystals ionicity, J. Phys. Chem. Solids 62(4), 761-765, 2001
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
  • M. J. GUNNING, R. Raab, W. Kucharczyk, S. B. LANG, Interferometric measurements of electrostrictive coefficients of KDP and ADP in transmission, Ferroelectr., Lett. Sect. 28(3-4), 93-102, 2001
  • K. Pernal, J. Cioslowski, On the validity of the extended Koopmans’ theorem, J. Chem. Phys. 114(10), 4359, 2001
  • D. Krzyżański, G. Derfel, Structure of the spontaneous periodic deformations in hybrid aligned nematic layers, Phys. Rev. E 63(2), 021702-1 - 021702-9, 2001
  • G. Derfel, D. Krzyżański, A. Tarnowiecki, Influence of weak anchoring on structure and occurrence of magnetic field induced PST stripes in nematic layers, Scientific Bulletin TUL. Physics 21, 39-49, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Modeling of Radial Steam Oxidation of AlAs Layers in Cylindrically Symmetric Mesa Structures of Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 289-299, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • P. Maćkowiak, W. Nakwaski, Some Aspects of Designing Efficient Nitride VCSEL Resonator, J. Phys. D: Appl. Phys. 34, 954-958, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A Novel Diagonal-Current-Injection VCSEL Design Proposed for Nitride Lasers, Semicond. Sci. Technol. 16, 598-602, 2001
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photon. Technol. Lett. 13, 687-689, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • W. Nakwaski, Optical Fields in Complex Multilayered Structures of Modern Semiconductor Optoelectronic Devices, Opto-Electron. Rev. 9, 269-273, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001
  • T. Czyszanowski, Method of Effective Index and Method of Lines for the Analysis of Optical Phenomena in the Edge Emitting (in-Plane) Diode Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 21, 31-38, 2001