Publications and conferences
Filters
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J. Behnisch, J. Tyczkowski, M. Gazicki, I. Pela, A. Holländer, R. Ledzion, Formation of hydrophobic layers on biologically degradable polymeric foils by plasma polymerization, Surf. Coat. Technol. 98(1-3), 872-874, 1998
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J. Prywer, S. Krukowski, GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen, MRS Internet J. N. S. R. 3, e47, 1998
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W. Nakwaski, M. Osiński, III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progress in Optics, Elsevier, pp. 165-262, 1998
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G. Derfel, On the analogy between the field-induced and flow-induced deformations in nematic liquid crystals, Liq. Cryst. 24(6), 829-834, 1998
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W. Nakwaski, R. Sarzała, Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Opt. Commun. 148, 63 - 69, 1998
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W. Nakwaski, M. Osiński, Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progr. Opt. XXXVIII, 165-262, 1998
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E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal Crosstalk in Arrays of Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 3283 (Physics and Simulation of Optoelectronic Devices VI), 384-395, 1998
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W. Nakwaski, Analiza Trendów Rozwojowych Azotkowych Laserów Złączowych Oraz Możliwości Ich Wytwarzania Na Podłożu GaN, Elektronika 39, 07-10, 1998
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J. Wilk, R. Sarzała, W. Nakwaski, The Spatial Hole Burning Effect in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, L11-L15,, 1998
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P. Maćkowiak, W. Nakwaski, Detailed Threshold Analysis of UV-Emitting Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, 2479-2484, 1998
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W. Nakwaski, Some Unsolved Problems Associated with Designing of Nitride Lasers (invited Paper), Opto-Electron. Rev. 6, 93-110, 1998
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W. Nakwaski, A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, Computer Simulations of Operations of Various Designs of Semiconductor Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 18, 51-58, 1998
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P. Maćkowiak, W. Nakwaski, Prospects for Nitride Vertical-Cavity Surface-Emitting Lasers, Proc. SPIE 3490 (Optics in Computing, OC'98, Brugge (Belgium) 1720 June, 1998), 331-334, 1998
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J. Prywer, S. Krukowski, GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen, MRS Internet J. N. S. R. 3, 47-52, 1998
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V. A. Kuznetsov, T. M. Okhrimenko, M. Rak, Growth Promoting Effect of Organic Impurities on Growth Kinetics of KAP and KDP Crystals, J. Cryst. Growth 193, 164-173., 1998
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R. Sarzała, W. Nakwaski, Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 144(6), 421-425, 1997
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W. Nakwaski, R. Sarzała, Analysis of Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Lasers, Electro-Optics Society 1997 Annual Meeting, LEOS'97, pp. 2 - 293-294, November 1997
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W. Nakwaski, <title>Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, Poland, 23 Sep 1996
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J. Prywer, <title>Faces transformation to an edge or a corner</title>, SPIE Proceedings, Poland, 07 Oct 1996
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M. Izdebski, M. Rak, A. Brozi, <title>Monte Carlo model of crystal growth with solvation</title>, SPIE Proceedings, Poland, 07 Oct 1996
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