Publikacje i konferencje

R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004

M. Dems, W. Nakwaski, Simplified Analytical Approach To Stress Problems in Multi-Layered Nitride Devices, International Conferenceon Solid State Crystals, Maj 2004

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004

M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 19(5), 667-667, 2004

M. Dems, W. Nakwaski, The Enhanced Effective Index Method for High-Contrast Photonic Crystal Slabs, 12th International Workshop on Optical Waveguide Theory and Numerical Modeling, Marzec 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004

A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004

W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation Kinetics of AlAs and (AlGa)As Layers in Arsenide-Based Diode Lasers: Comparative Analysis of Available Experimental Data, Semicond. Sci. Technol. 19, 333-341, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003

W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. O. ski, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data, Semicond. Sci. Technol. 19(3), 333-341, 2003

M. Dems, Modeling of Mechanical Stress Fields in Multi-Layered Structures of Diode Lasers, 1st CEPHONA Workshop on Computer Simulation and Design of Semiconductor Lasers, Listopad 2003

W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, <title>Single-photon devices in quantum cryptography</title>, SPIE Proceedings, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, <title>Simulation of threshold operation of GaInNAs diode lasers</title>, SPIE Proceedings, 2003

P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, <title>Designing of possible structures of nitride vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, 2003

W. Nakwaski, A. Tomczyk, R. Sarzała, A Possibility To Design Nitride in-Plane Diode-Laser Arrays, European Semiconductor Laser Workshop 2003, str. Paper N^o 20, Wrzesień 2003

P. Maćkowiak, R. P. S. a, M. Wasiak, W. Nakwaski, Radial optical confinement in nitride VCSELs, J. Phys. D: Appl. Phys. 36(17), 2041-2045, 2003

M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 18(8), 733-737, 2003

M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output power saturation in InAs/GaAs quantum dot lasers, Physica Status Solidi C - Conferences, 1351-1354, 2003