Publikacje i konferencje

A. Opanowicz, K. Przybyszewski, On the analysis of transient photo-induced photoconductivity in insulating crystals, Zeszyty Naukowe. Rozprawy Naukowe / Politechnika Łódzka 704(13), 71-82, 1994

W. Nakwaski, M. Osiński, Self-Consistent Thermal-Electrical Modeling of Proton-Implanted Top-Surface-Emitting Semiconductor Lasers (invited Paper), Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 365-387, 1994

M. Osiński, W. Nakwaski, P. Varangis, Analysis of Current Spreading and Series Resistance in GaAs/AlGaAs Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 388-396, 1994

M. Osiński, W. Nakwaski, A. Leal, Effective Thermal Conductivity Analysis of Vertical-Cavity Top-Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Proc. SPIE 2147 (Vertical-Cavity Surface-Emitting Arrays), 85-96, 1994

J. Prywer, Second Neighbours Velocities and Size of Faces in Crystal Habit, Cryst. Res. Technol., K17-K20, 1994

W. Kucharczyk, An Empirical Correlation of Electron Density with Optical Susceptibility and Ionicity in Partly Ionic Diatomic Crystals, Physica Status Solidi (B): Basic Research 180(1), K27-K29, 1993

W. Nakwaski, M. Osiński, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors, IEEE J. Quantum. Electron. 29(6), 1981-1995, 1993

M. Osiński, W. Nakwaski, Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasers, str. 1015-1016, Maj 1993

M. Szurgot, On the Formation of Thick Sector Boundaries by Appearance and Disappearance of Faces of Crystals, Cryst. Res. Technol. 28(4), 511-518, 1993

M. Osiński, W. Nakwaski, J. Cheng, Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers, SPIE Proceedings, 08-09 Wrz 1992

W. Nakwaski, M. Osiński, Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers, SPIE Proceedings, 08-09 Wrz 1992

J. Prywer, Second Neighbours Velocities and Size of Faces in Crystal Habit, Cryst. Res. Technol. 28(7), K73-K76, 1993

W. Nakwaski, Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding, Integrated Optoelectronics for Communication and Processing, Boston, United States, 01-07 Wrz 1991

W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992

W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, str. K47-K49, Lipiec 1992

M. Szurgot, On the Critical Growth Velocities for the Presence of Faces on Growing Crystals, Cryst. Res. Technol. 27(7), 919-929, 1992

M. Osiński, W. Nakwaski, Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays, Laser Diode Technology and Applications IV, 20-22 Sty 1992

R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, str. 1447-1462, Czerwiec 1992

M. Szurgot, On the Presence of Faces in the Habit of Growing Crystals, Cryst. Res. Technol. 27(4), 443-450, 1992

W. Kucharczyk, Quadratic electro-optic effect and second-order strain derivatives of electronic susceptibility, Physica B: Condensed Matter 176(3), 189-208, 1992