Publikacje i konferencje

T. Czyszanowski, W. Nakwaski, Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers, J. Phys. D: Appl. Phys. 39(1), 30-35, 2005

R. Sarzała, W. Nakwaski, Methods to enhance mode selectivity of higher-output vertical-cavity surface-emitting diode lasers, SPIE Proceedings, Poland, 28 Sie-02 Wrz 2005

D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, Analysis of Facet Heating in Semiconductor Lasers, Proceedings of SPIE/Ukraine, vol. 6 (1-6), 2006, str. 6 - 76–82, Wrzesień 2005

R. Sarzała, Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 275-283, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified k·p method to investigate polarization effects in nitride quantum-well devices, Physica E: Low-Dimensional Systems and Nanostructures 25(4), 504-514, 2005

M. Dems, R. Kotyński, K. Panajotov, Plane Wave Admittance Method - a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13(9), 3196, 2005

R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005

W. Nakwaski, Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers., Opt. Appl. 35, 579-589, 2005

R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005

M. Wasiak, M. Bugajski, W. Nakwaski, Envelope function description of quantum cascade laser electronic states., Opt. Appl. 35, 651-654, 2005

M. Dems, K. Panajotov, T. Czyszanowski, R. Kotyński, W. Nakwaski, Simulation of photonic crystal diode lasers with plane-wave admittance method, European Symposium on Photonic Crystals, 2005

M. Dems, R. Kotyński, K. Panajotov, PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13, 3196-3207, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005

R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004

R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004

T. Czyszanowski, M. Dems, W. Nakwaski, Usability Comparison of Scalar and Vectorial Optical Approaches To Simulation of a 1.3μm InGaAsN VCSEL Operation, 6th International Conference on Transparent Optical Networks, str. 1 - 375-376, Lipiec 2004

R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004

M. Dems, W. Nakwaski, Simplified Analytical Approach To Stress Problems in Multi-Layered Nitride Devices, International Conferenceon Solid State Crystals, Maj 2004

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004