Publikacje i konferencje

M. Dems, R. Kotyński, K. Panajotov, Plane Wave Admittance Method - a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13(9), 3196, 2005

R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005

W. Nakwaski, Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers., Opt. Appl. 35, 579-589, 2005

R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005

M. Wasiak, M. Bugajski, W. Nakwaski, Envelope function description of quantum cascade laser electronic states., Opt. Appl. 35, 651-654, 2005

M. Dems, K. Panajotov, T. Czyszanowski, R. Kotyński, W. Nakwaski, Simulation of photonic crystal diode lasers with plane-wave admittance method, European Symposium on Photonic Crystals, 2005

M. Dems, R. Kotyński, K. Panajotov, PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13, 3196-3207, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005

R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004

R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004

T. Czyszanowski, M. Dems, W. Nakwaski, Usability Comparison of Scalar and Vectorial Optical Approaches To Simulation of a 1.3μm InGaAsN VCSEL Operation, 6th International Conference on Transparent Optical Networks, str. 1 - 375-376, Lipiec 2004

R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004

M. Dems, W. Nakwaski, Simplified Analytical Approach To Stress Problems in Multi-Layered Nitride Devices, International Conferenceon Solid State Crystals, Maj 2004

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004

M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 19(5), 667-667, 2004

M. Dems, W. Nakwaski, The Enhanced Effective Index Method for High-Contrast Photonic Crystal Slabs, 12th International Workshop on Optical Waveguide Theory and Numerical Modeling, Marzec 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004

A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004