Publikacje i konferencje

M. Dems, W. Nakwaski, Thermal, Molecular Stress Generation in Multi-Layered Structures of Nitride Devices, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, str. 51-53, Czerwiec 2003

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, W. Nakwaski, M. Bugajski, Three-Dimensional Comprehensive Self-Consistent Simulation of a Room-Temperature Continuous-Wave Operation of GaAs-Based 1.3-μm Quantum-Dot (InGa)As/GaAs Vertical-Cavity Surface-Emitting Lasers, 5th International Conference on Transparent Optical Networks: ICTON 2003, str. 2 - 95-98, Czerwiec 2003

A. Tomczyk, R. Sarzała, W. Nakwaski, Thermal Model of Nitride Edge-Emitting Diode Lasers, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, str. 183-186, Czerwiec 2003

M. Dems, W. Nakwaski, The Self-Consistent Method for Determination of a Band Structure in Photonic Crystals with Frequency-Dependent Dielectric Constants, 5th International Conference on Transparent Optical Networks: ICTON 2003, str. 1 - 276-279, Czerwiec 2003

W. Nakwaski, R. Sarzała, P. Maćkowiak, Analysis of the Feedback Between Electrical, Thermal Phenomena in Nitride Devices Using a Vertical-Cavity Surface-Emitting Laser As An Example, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, Czerwiec 2003

W. Nakwaski, R. Sarzała, P. Maćkowiak, Mutual Interactions Between Electrical, Thermal Phenomena in Nitride VCSELs Influencing Current Spreading Within Their Volumes, International Conference "Laser Physics, Laser Applications", Maj 2003

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design guidelines for fundamental-mode-operated cascade nitride VCSELs, IEEE Photon. Technol. Lett. 15(4), 495-497, 2003

W. Nakwaski, R. Sarzała, Designing of 1.3-μm Arsenide VCSELs, International Workshop on GaAs Based Lasers for the 1.3-1.5$\mu$m Wavelength Range, Kwiecień 2003

W. Nakwaski, P. MAC´KOWIAK, [], Opt. Quant. Electron. 35(11), 1037-1054, 2003

R. Sarzała, [], Opt. Quant. Electron. 35(7), 675-692, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure optimisation of 1.3 μm (GaIn)(NAs)∕GaAs in-plane lasers, IEE P. - Optoelectron. 150(1), 56, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 150(1), 83, 2003

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully Self-Consistent Three-Dimensional Model of Edge-Emitting Nitride Diode Lasers, Opto-Electron. Rev. 11, 65-75, 2003

W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices in Quantum Cryptography, Opto-Electron. Rev. 11, 127-132, 2003

P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003

M. Dems, W. Nakwaski, Thermal and Molecular Stresses in Multi-Layered Structures of Nitride Devices, Semicond. Sci. Technol. 18, 733-737, 2003

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Radial Optical Confinement in Nitride VCSELs, J. Phys. D: Appl. Phys. 26, 2041-2045, 2003

W. Nakwaski, Some Unexpected Behaviours of Nitride Devices Following From Special Features of Nitride Semiconductors, Opto-Electron. Rev. in preparation, 2003

W. Nakwaski, P. Maćkowiak, How To Reach a Single-Fundamental-Mode Operation of Nitride VCSELs, Proc. SPIE accepted, 2003