Wyczyść filtry
  • R. Sarzała, P. Maćkowiak, W. Nakwaski, Temperature-Enhanced Radial Current Spreading in Possible VCSEL Structures of Nitride Lasers, Semicond. Sci. Technol. 17, 255-260, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. I. Analytical Thermal Model, Opt. Appl. 32, 157-172, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. II. Results and Discussion, Opt. Appl. 32, 173-185, 2002
  • P. Maćkowiak, M. Wasiak, T. Czyszanowski, R. Sarzała, W. Nakwaski, Designing Guidelines for Nitride VCSELs Resonator, Opt. Appl. 32, 493-502, 2002
  • M. Wasiak, M. Bugajski, E. Machowska-Podsiadło, T. J. Ochalski, J. Kątcki, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, J. . Chen, U. Oesterle, A. Fiore, M. Ilegems, Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots, Opt. Appl. 32, 291-299, 2002
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher-Order Transverse Modes in Possible Nitride VCSELs, Phys. Stat. Sol., 48-51, 2002
  • T. Czyszanowski, M. Wasiak, P. Maćkowiak, R. Sarzała, W. Nakwaski, Method of Lines - the New Vectorial Approach To Optical Phenomena in Diode Lasers, Opt. Appl. 32, 477-484, 2002
  • R. Sarzała, Computer Simulation of Performance Characteristics of (GaIn)(NAs) Diode Lasers, Opt. Appl. 32, 449-460, 2002
  • R. Sarzała, M. Wasiak, T. Czyszanowski, M. Bugajski, W. Nakwaski, Analysis of Lasing Thresholds of 1.3-μm Oxide-Confined in-Plane Quantum-Dot (InGa)(As/GaAs Lasers, European Workshop on Gallium Arsenide-Based Lasers at 1300 nm, Wrzesień 2001
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
     10.1016/S0010-4655(01)00238-7 
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures, IEEE Photon. Technol. Lett. 13(7), 687-689, 2001
     10.1109/68.930415 
  • T. Czyszanowski, W. Nakwaski, How many quantum wells in nitride lasers?, J. Phys. D: Appl. Phys. 34(15), 2346-2352, 2001
     10.1088/0022-3727/34/15/314 
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A novel diagonal-current injection VCSEL design proposed for nitride lasers, Semicond. Sci. Technol. 16(7), 598-602, 2001
     10.1088/0268-1242/16/7/313 
  • R. Sarzała, P. Maćkowiak, W. Nakwaski, Designing of Current Spreading in Possible Continuous-Wave-Operating Nitride VCSELs, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", str. 65-66, Czerwiec 2001
  • P. Maćkowiak, W. Nakwaski, An Impact of a Barrier Width Between Active-Region Quantum Wells on Thresholds of Nitride VCSELs, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", Czerwiec 2001
  • T. Czyszanowski, W. Nakwaski, Designing of Multiple-Quantum-Well Active Regions in Nitride Diode Lasers, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", str. 67-68, Czerwiec 2001
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
     10.1088/0022-3727/34/6/317 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001