Wyczyść filtry
  • W. Nakwaski, Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding, Integrated Optoelectronics for Communication and Processing, Boston, United States, 01-07 Wrz 1991
     10.1117/12.2321814 
  • W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992
     10.1063/1.107974 
  • W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, str. K47-K49, Lipiec 1992
     10.1002/pssa.2211320136 
  • M. Osiński, W. Nakwaski, Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays, Laser Diode Technology and Applications IV, 20-22 Sty 1992
     10.1117/12.59124 
  • R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, str. 1447-1462, Czerwiec 1992
     10.1007/BF01975077 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 491-500, 1992
     10.1002/pssa.2211290219 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 501-508, 1992
     10.1002/pssa.2211290220 
  • W. Nakwaski, M. Osiński, Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays, str. 572, 1992
     10.1049/el:19920361 
  • W. Nakwaski, M. Osiński, Thermal analysis of etched-well surface-emitting diode lasers, Microw. Opt. Techn. Let. 4(12), 541-543, 1991
     10.1002/mop.4650041209 
  • W. Nakwaski, M. Osiński, Heat-source distribution in etched-well surface-emitting semiconductor lasers, IEEE Photon. Technol. Lett. 3(11), 979-981, 1991
     10.1109/68.97833 
  • A. Brozi, Method of determining the rotation boundary values in two-dimensional gas flow, Physica Status Solidi (A) Applications and Materials 127(1), K15-K18, 1991
     10.1002/pssa.2211270136 
  • W. Nakwaski, M. Osiński, Thermal properties of etched-well surface-emitting semiconductor lasers, IEEE J. Quantum. Electron. 27(6), 1391-1401, 1991
     10.1109/3.89956 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, Opt. Quant. Electron. 23(3), 427-432, 1991
     10.1007/BF00619615 
  • W. Nakwaski, Note to reply of R.F. Ormondroyd, J. Lumin. 46(6), 423, 1990
     10.1016/0022-2313(90)90070-R 
  • W. Nakwaski, Comment on “The dynamic temperature distributions in stripe geometry lasers”, J. Lumin. 46(6), 419-420, 1990
     10.1016/0022-2313(90)90068-M 
  • A. Korzeniowski, W. Nakwaski, Thermal optimization of a construction of a double-heterostructure GaAs/(AlGa)As diode laser, str. 1039-1047, Maj 1990
     10.1007/BF01904640 
  • R. Sarzała, W. Nakwaski, An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers, str. 1171-1189, Maj 1990
     10.1007/BF01904651 
  • W. Nakwaski, Three‐dimensional analysis of a heat‐spreading phenomenon in phase‐locked arrays of oxide‐isolated diode lasers, J. Appl. Phys. 67(6), 2711-2715, 1990
     10.1063/1.345459 
  • W. Nakwaski, Thermal model of the catastrophic degradation of high‐power stripe‐geometry GaAs/(AlGa)As double‐heterostructure diode lasers, J. Appl. Phys. 67(4), 1659-1668, 1990
     10.1063/1.345633 
  • S. Pufal, W. Nakwaski, The Monte-Carlo Simulation Of The Surface Light Emitting Diode (LED) Operation., SPIE Proceedings, 1990
     10.1117/12.952971