Publikacje i konferencje

M. Izdebski, W. Kucharczyk, R. Raab, Computer simulations of the measurement of quadratic electro-optic coefficients associated with rotations of the principal axes of the optical permittivity tensor, J. Opt. A - Pure Appl. Op. 5(2), 147-151, 2003

J. Prywer, Correlation Between Crystal Structure, Relative Growth Rates and Evolution of Crystal Surfaces, Acta Phys. Pol. A 103(1), 85-100, 2003

J. Prywer, Correlation Between Crystal Structure, Relative Growth Rates and Evolution of Crystal Surfaces, Acta Phys. Pol. A 103(1), 85-100, 2003

W. Nakwaski, P. MAC´KOWIAK, [], Opt. Quant. Electron. 35(11), 1037-1054, 2003

R. Sarzała, [], Opt. Quant. Electron. 35(7), 675-692, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure optimisation of 1.3 μm (GaIn)(NAs)∕GaAs in-plane lasers, IEE P. - Optoelectron. 150(1), 56, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 150(1), 83, 2003

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully Self-Consistent Three-Dimensional Model of Edge-Emitting Nitride Diode Lasers, Opto-Electron. Rev. 11, 65-75, 2003

W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices in Quantum Cryptography, Opto-Electron. Rev. 11, 127-132, 2003

P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003

M. Dems, W. Nakwaski, Thermal and Molecular Stresses in Multi-Layered Structures of Nitride Devices, Semicond. Sci. Technol. 18, 733-737, 2003

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Radial Optical Confinement in Nitride VCSELs, J. Phys. D: Appl. Phys. 26, 2041-2045, 2003

W. Nakwaski, Some Unexpected Behaviours of Nitride Devices Following From Special Features of Nitride Semiconductors, Opto-Electron. Rev. in preparation, 2003

W. Nakwaski, P. Maćkowiak, How To Reach a Single-Fundamental-Mode Operation of Nitride VCSELs, Proc. SPIE accepted, 2003

M. Osiński, T. Svimonishvili, W. Nakwaski, Analytical Approach To Steam Oxidation of AlAs in Cylindrically Symmetric Mesa Structures, Appl. Phys. Lett. submitted, 2003

S. P. Łepkowski, W. Nakwaski, M. Bugajski, Equivalent Electrical Parameters of Semiconductor Bragg Mirrors and Their Application in Modelling of Vertical-Cavity Surface-Emitting Lasers, IEEE J. Quantum. Electron. submitted, 2003

M. Szymański, B. Mroziewicz, W. Nakwaski, Threshold Analysis of Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003

W. Nakwaski, M. Osiński, Study of a Room-Temperature Operation of 1.3-μm Etched-Well Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. submitted, 2003

W. Nakwaski, M. Szymański, B. Mroziewicz, Cylindrical Electromagnetic Waves in Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003