Wyczyść filtry
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005
  • A. M. Wiosetek-Reske, S. Wysocki, G. Bąk, Determination of dipole moment in the ground and excited state by experimental and theoretical methods of N-nonyl acridine orange., Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy 62(4-5), 1172-1178, 2005
  • M. Szurgot, Kryształy w technice, Kryształy w przyrodzie i technice. Przewodnik po świecie kryształów, ISBN:9788375251777, str. 35-54, 2005
  • R. M. Vázquez, J. Prywer, E. Dieguez, Simulations of doped YAl3(BO3)4 crystals shape, J. Cryst. Growth 275(1-2), e909-e913, 2005
  • M. R. Vazquez, J. Prywer, E. Dieguez, Simulations of doped Yal3(BO3)4 crystals shape., J. Cryst. Growth 275, e909-e913, 2005
  • M. Szurgot, Morfologia kryształów, Kryształy w przyrodzie i technice. Przewodnik po świecie kryształów, ISBN:9788375251777, str. 75-100, 2005
  • M. Szurgot, Kryształy w meteorytach, Kryształy w przyrodzie i technice. Przewodnik po świecie kryształów, ISBN:9788375251777, str. 151-167, 2005
  • M. Kohout, K. Pernal, F. R. Wagner, Y. Grin, Electron localizability indicator for correlated wavefunctions. I. Parallel-spin pairs, Theor. Chem. Acc. 112(5-6), 453-459, 2004
     10.1007/s00214-004-0615-y 
  • J. Prywer, Explanation of some peculiarities of crystal morphology deduced from the BFDH law, J. Cryst. Growth 270(3-4), 699-710, 2004
     10.1016/j.jcrysgro.2004.06.046 
  • R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004
     10.1049/ip-opt:20040936 
  • M. Felczak, G. Derfel, <title>Effect of ionic charge on flexoelectric deformations in planar nematic layers</title>, SPIE Proceedings, Poland, 13-17 Paź 2003
     10.1117/12.581133 
  • R. P. S. a, A new approach to improve mode selectivity of higher output oxide-confined vertical-cavity surface-emitting lasers, Semicond. Sci. Technol. 19(9), 1122-1124, 2004
     10.1088/0268-1242/19/9/009 
  • J. Prywer, Effect of Seed Faces on Time-Dependent Crystal Morphology, Cryst. Growth Des. 4(6), 1365-1369, 2004
     10.1021/cg0499360 
  • R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004
     10.1088/0953-8984/16/31/009 
  • T. Czyszanowski, M. Dems, W. Nakwaski, Usability Comparison of Scalar and Vectorial Optical Approaches To Simulation of a 1.3μm InGaAsN VCSEL Operation, 6th International Conference on Transparent Optical Networks, str. 1 - 375-376, Lipiec 2004
  • R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004
     10.1109/JQE.2004.828228 
  • J. Cioslowski, K. Pernal, Size versus volume extensivity of a new class of density matrix functionals, J. Chem. Phys. 120(22), 10364-10367, 2004
     10.1063/1.1738411 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004
     10.1088/0268-1242/19/8/008 
  • M. Dems, W. Nakwaski, Simplified Analytical Approach To Stress Problems in Multi-Layered Nitride Devices, International Conferenceon Solid State Crystals, Maj 2004
  • M. Włodarska, B. Mossety-Leszczak, H. Galina, G. Bąk, T. Pakula, Phase transitions and molecular properties of new divinyl and diepoxy compounds, Liq. Cryst. 31(4), 525-534, 2004
     10.1080/02678290410001648615