• W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices in Quantum Cryptography, Opto-Electron. Rev. 11, 127-132, 2003
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003
  • M. Dems, W. Nakwaski, Thermal and Molecular Stresses in Multi-Layered Structures of Nitride Devices, Semicond. Sci. Technol. 18, 733-737, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Radial Optical Confinement in Nitride VCSELs, J. Phys. D: Appl. Phys. 26, 2041-2045, 2003
  • W. Nakwaski, Some Unexpected Behaviours of Nitride Devices Following From Special Features of Nitride Semiconductors, Opto-Electron. Rev. in preparation, 2003
  • W. Nakwaski, P. Maćkowiak, How To Reach a Single-Fundamental-Mode Operation of Nitride VCSELs, Proc. SPIE accepted, 2003
  • M. Osiński, T. Svimonishvili, W. Nakwaski, Analytical Approach To Steam Oxidation of AlAs in Cylindrically Symmetric Mesa Structures, Appl. Phys. Lett. submitted, 2003
  • S. P. Łepkowski, W. Nakwaski, M. Bugajski, Equivalent Electrical Parameters of Semiconductor Bragg Mirrors and Their Application in Modelling of Vertical-Cavity Surface-Emitting Lasers, IEEE J. Quantum. Electron. submitted, 2003
  • M. Szymański, B. Mroziewicz, W. Nakwaski, Threshold Analysis of Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • W. Nakwaski, M. Osiński, Study of a Room-Temperature Operation of 1.3-μm Etched-Well Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. submitted, 2003
  • W. Nakwaski, M. Szymański, B. Mroziewicz, Cylindrical Electromagnetic Waves in Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design Guidelines for Fundamental-Mode-Operated Cascade Nitride VCSELs, IEEE Photon. Technol. Lett. 15, 495-497, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure Optimization of 1.3-μm (GaIn)(NAs)/GaAs in-Plane Lasers, IEEE Proc. Optoelectr. 150, 56-58, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Performance Characteristics of GaInNAs Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 150, 83-85, 2003
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output Power Saturation in InAs/GaAs Quantum Dot Lasers, Phys. Stat. Sol., 1351-1354, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL Design for Continuous-Wave Operation of Higher-Order Optical Modes, Appl. Phys. A: Mat. Sci. \& Process. 77, 761-768, 2003
  • J. Prywer, Crystal faces existence and morphological stability from crystallographic perspective, Cryst. Growth Des. 3, 593-598, 2003
  • J. Prywer, On the interrelation between crystal morphology and its geometry, Scientific Bulletin TUL. Physics 23, 43-57, 2003
  • M. Włodarska, G. Bąk, W. Bartczak, Ab initio calculation of molecular structure and dipole moment for selected divinyl and diepoxy molecules, str. 59-67, Grudzień 2002