Wyczyść filtry
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs, Microelectr. J. 39(3-4), 641-643, 2008
     10.1016/j.mejo.2007.07.048 
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers, Opto-Electron. Rev. 16(1), 27-33, 2008
     10.2478/s11772-007-0035-3 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Investigation of operational characteristics and possibility of obtaining highly detuned GaInNAsSb VCSEL, str. 445-448, Styczeń 2008
     10.1002/pssc.200777451 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures, Opto-Electron. Rev. 16(1), 34-41, 2008
     10.2478/s11772-007-0027-3 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs., Microelectr. J. No 39, 641-643, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: excitation of various transverse LPij modes, Microelectr. J. No.39(3-4), 638-640, 2008
  • K. Gutowski, R. Sarzała, Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications:, Mater. Sci. 26(1), 45-53, 2008
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography., Appl. Phys. Lett. 92, 103513, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers:, Opto-Electron. Rev. 16(1), 68-74, 2008
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
     10.1109/JQE.2007.904492 
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers, Physica Status Solidi (A) Applications and Materials 204(10), 3562-3573, 2007
     10.1002/pssa.200622559 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, K. Panajotov, Optimal Designs of Telecommunications Oriented Photonic-Crystal VCSELs, 2007 9th International Conference on Transparent Optical Networks, Italy, 01-05 Lip 2007
     10.1109/ICTON.2007.4296136 
  • T. Czyszanowski, M. Dems, R. Sarzała, H. Thienpont, K. Panajotov, Optimal Designs of Telecommunications Oriented Photonic-Crystal VCSELs, 9th International Conference on Transparent Optical Networks, ICTON 2007, str. 2 - 44-47, Lipiec 2007
  • A. Kozłowska, M. Ziegler, J. W. Tomm, R. Sarzała, W. Nakwaski, Thermal Imaging of Actively Cooled High-Power Laser Bars, 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems, Poland, 21-23 Cze 2007
     10.1109/MIXDES.2007.4286191 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, Transient thermal properties of high-power diode laser bars, 2007 Quantum Electronics and Laser Science Conference, United States, 06-11 Maj 2007
     10.1109/QELS.2007.4431381 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, Transient thermal properties of high-power diode laser bars, 2007 Conference on Lasers and Electro-Optics (CLEO), United States, 06-11 Maj 2007
     10.1109/CLEO.2007.4453604 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Thermal Properties of the 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, Fifth International Conference on Solid State Crystals \& Eight Polish Conference on Crystal Growth – ICSSC-5 \& PCCG-8 Conference, Maj 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(6), 593-600, 2007
     10.1088/0268-1242/22/6/002