Wyczyść filtry
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50−1.55 μm wavelength range, J. Appl. Phys. 101(7), 073103, 2007
     10.1063/1.2719009 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Advanced Computer Simulation of the 650-nm Room-Temperature Continuous-Wave Operation of the GaInP/AlGaInP QW VCSEL, The Sixth International Conference on Low Dimensional Structures and Devices, LDSD2007, Kwiecień 2007
  • T. Czyszanowski, R. Sarzała, M. Dems, K. Panajotov, Photonic-Crystal VCSELs, International Workshop on Advances in Physics and Technology of Photonic Crystals, str. 20, Kwiecień 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Mode Selectivity of 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, International Workshop on PHysics \& Applications of SEmiconductor LASERs, Marzec 2007
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Simulation and Optimization of 1.3-μm Oxide-Confined Quantum-Dot Vertical-Cavity Surface-Emitting Lasers, polsko-singapurska konferencja, Luty 2007
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used To Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43, 1041-1047, 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-Consistent Model of the 650-nm GaInP/AlGaInP Quantum-Well Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22 (6), 593-600, 2007
  • R. Sarzała, Optimization of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22, 113-118, 2007
  • R. Sarzała, W,, Nakwaski,, GaInNAsSb/GaNAs Quantum-Well VCSELs: Modeling and Physical Analysis in the 1.50-1.55 μm Wavelength Range, J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers., Physica Status Solidi (A) Applications and Materials 204 No. 10, 3562-3573, 2007
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: modeling and physical analysis in the 1.50 – 1.55 μm wavelength range., J. Appl. Phys. 101, 073103, 2007
  • R. Sarzała, Optimization of oxide-confined vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(2), 113-118, 2006
     10.1088/0268-1242/22/2/019 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high-power diode laser bars, Appl. Phys. Lett. 89(26), 263506, 2006
     10.1063/1.2424644 
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure, J. Appl. Phys. 99(12), 123110, 2006
     10.1063/1.2206129 
  • R. Sarzała, W. Nakwaski, Comparative Analysis of Various Designs of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, 2006 International Conference on Transparent Optical Networks, United Kingdom, 18-22 Cze 2006
     10.1109/ICTON.2006.248527 
  • R. Sarzała, W. Nakwaski, Comparative Analysis of Various Designs of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, 8th International Conference on Transparent Optical Networks, ICTON 2006, str. 4 - 160-163, Czerwiec 2006
  • R. Sarzała, W. Nakwaski, Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region, Opt. Quant. Electron. 38(4-6), 293-311, 2006
     10.1007/s11082-006-0030-9 
  • R. Sarzała, W. Nakwaski, Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities, Opt. Quant. Electron. 38(4-6), 325-337, 2006
     10.1007/s11082-006-0035-4 
  • R. Sarzała, W. Nakwaski, <title>Physics of an operation of vertical cavity surface emitting lasers with oxide apertures</title>, SPIE Proceedings, Poland, 25-29 Wrz 2006
     10.1117/12.726647 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high- power diode laser bars., Appl. Phys. Lett. 89, 263506, 2006