Publikacje i konferencje

R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure., J. Appl. Phys. 99 s.123110-1(9), 2006

R. Sarzała, W. Nakwaski, Methods to enhance mode selectivity of higher-output vertical-cavity surface-emitting diode lasers, SPIE Proceedings, Poland, 28 Sie-02 Wrz 2005

R. Sarzała, Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 275-283, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified k·p method to investigate polarization effects in nitride quantum-well devices, Physica E: Low-Dimensional Systems and Nanostructures 25(4), 504-514, 2005

R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005

R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005

R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004

R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004

A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003

W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, <title>Single-photon devices in quantum cryptography</title>, SPIE Proceedings, 2003

R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, <title>Simulation of threshold operation of GaInNAs diode lasers</title>, SPIE Proceedings, 2003

P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, <title>Designing of possible structures of nitride vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, 2003

W. Nakwaski, A. Tomczyk, R. Sarzała, A Possibility To Design Nitride in-Plane Diode-Laser Arrays, European Semiconductor Laser Workshop 2003, str. Paper N^o 20, Wrzesień 2003

M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output power saturation in InAs/GaAs quantum dot lasers, Physica Status Solidi C - Conferences, 1351-1354, 2003