• K. Gutowski, R. Sarzała, Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications:, Mater. Sci. 26(1), 45-53, 2008
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography., Appl. Phys. Lett. 92, 103513, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers:, Opto-Electron. Rev. 16(1), 68-74, 2008
  • W. Nakwaski, Principles of VCSEL designing, Opto-Electron. Rev. 16(1), 18-26, 2008
  • E. Gęsikowska, W. Nakwaski, An impact of multi-layered structures of modern optoelectronic devices on their thermal properties, Opt. Quant. Electron. 40(2-4), 205-216, 2007
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers, Physica Status Solidi (A) Applications and Materials 204(10), 3562-3573, 2007
  • A. Kozłowska, M. Szymański, E. Pruszyńska-Karbownik, M. Bugajski, R. Pomraenke, C. Lienau, J. Renard, A. Maląg, Tailoring of optical mode profiles of high-power diode lasers evidenced by near-field photocurrent spectroscopy, Appl. Phys. Lett. 91(10), 101103, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers, J. Lightwave Technol. 25(9), 2331-2336, 2007
  • M. Dems, K. Panajotov, Modeling of single- and multimode photonic-crystal planar waveguides with the plane-wave admittance method, Appl. Phys. B: Lasers Opt. 89(1), 19-23, 2007
  • T. Czyszanowski, W. Nakwaski, Comparison of Exactness of Scalar and Vectorial Optical Methods Used to Model a VCSEL Operation, IEEE J. Quantum. Electron. 43(5), 399-406, 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(6), 593-600, 2007
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50−1.55 μm wavelength range, J. Appl. Phys. 101(7), 073103, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Impact of the hole depth on the modal behaviour of long wavelength photonic crystal VCSELs, J. Phys. D: Appl. Phys. 40(9), 2732-2735, 2007
  • R. Kotyński, M. Dems, K. Panajotov, Waveguiding losses of micro-structured fibres—plane wave method revisited, Opt. Quant. Electron. 39(4-6), 469, 2007
  • M. Dems, T. Czyszanowski, K. Panajotov, Numerical analysis of high Q-factor photonic-crystal VCSELs with plane-wave admittance method, Opt. Quant. Electron. 39(4-6), 419-426, 2007
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Modal behavior of photonic-crystal vertical-cavity surface-emitting diode laser analyzed with Plane Wave Admittance Method, Opt. Quant. Electron. 39(4-6), 427-433, 2007
  • P. Bienstman, S. Selleri, L. Rosa, H. P. Uranus, W. C. L. Hopman, R. Costa, A. Melloni, L. C. Andreani, J. P. Hugonin, P. Lalanne, D. Pinto, S. S. A. Obayya, M. Dems, K. Panajotov, Modelling leaky photonic wires: A mode solver comparison, Opt. Quant. Electron. 38(9-11), 731-759, 2007