Publikacje i konferencje

M. Dems, R. Kotyński, K. Panajotov, PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13, 3196-3207, 2005

J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005

R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004

R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004

R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004

A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004

R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004

M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 19(5), 667-667, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004

A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004

W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation Kinetics of AlAs and (AlGa)As Layers in Arsenide-Based Diode Lasers: Comparative Analysis of Available Experimental Data, Semicond. Sci. Technol. 19, 333-341, 2004

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003

W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. O. ski, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data, Semicond. Sci. Technol. 19(3), 333-341, 2003

P. Maćkowiak, R. P. S. a, M. Wasiak, W. Nakwaski, Radial optical confinement in nitride VCSELs, J. Phys. D: Appl. Phys. 36(17), 2041-2045, 2003

M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 18(8), 733-737, 2003

M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output power saturation in InAs/GaAs quantum dot lasers, Physica Status Solidi C - Conferences, 1351-1354, 2003

P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design guidelines for fundamental-mode-operated cascade nitride VCSELs, IEEE Photon. Technol. Lett. 15(4), 495-497, 2003

W. Nakwaski, P. MAC´KOWIAK, [], Opt. Quant. Electron. 35(11), 1037-1054, 2003

R. Sarzała, [], Opt. Quant. Electron. 35(7), 675-692, 2003