Wyczyść filtry
  • W. Nakwaski, M. Osiński, Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progr. Opt. XXXVIII, 165-262, 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal Crosstalk in Arrays of Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 3283 (Physics and Simulation of Optoelectronic Devices VI), 384-395, 1998
  • W. Nakwaski, Analiza Trendów Rozwojowych Azotkowych Laserów Złączowych Oraz Możliwości Ich Wytwarzania Na Podłożu GaN, Elektronika 39, 07-10, 1998
  • J. Wilk, R. Sarzała, W. Nakwaski, The Spatial Hole Burning Effect in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, L11-L15,, 1998
  • P. Maćkowiak, W. Nakwaski, Detailed Threshold Analysis of UV-Emitting Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, 2479-2484, 1998
  • W. Nakwaski, Some Unsolved Problems Associated with Designing of Nitride Lasers (invited Paper), Opto-Electron. Rev. 6, 93-110, 1998
  • W. Nakwaski, A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, Computer Simulations of Operations of Various Designs of Semiconductor Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 18, 51-58, 1998
  • P. Maćkowiak, W. Nakwaski, Prospects for Nitride Vertical-Cavity Surface­-Emitting Lasers, Proc. SPIE 3490 (Optics in Computing, OC'98, Brugge (Belgium) 17­20 June, 1998), 331-334, 1998
  • J. Prywer, S. Krukowski, GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen, MRS Internet J. N. S. R. 3, 47-52, 1998
  • V. A. Kuznetsov, T. M. Okhrimenko, M. Rak, Growth Promoting Effect of Organic Impurities on Growth Kinetics of KAP and KDP Crystals, J. Cryst. Growth 193, 164-173., 1998
  • R. Sarzała, W. Nakwaski, Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 144(6), 421-425, 1997
     10.1049/ip-opt:19971300 
  • W. Nakwaski, R. Sarzała, Analysis of Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Lasers, Electro-Optics Society 1997 Annual Meeting, LEOS'97, str. 2 - 293-294, Listopad 1997
  • W. Nakwaski, <title>Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, Poland, 23 Wrz 1996
     10.1117/12.280513 
  • J. Prywer, <title>Faces transformation to an edge or a corner</title>, SPIE Proceedings, Poland, 07 Paź 1996
     10.1117/12.280720 
  • M. Izdebski, M. Rak, A. Brozi, <title>Monte Carlo model of crystal growth with solvation</title>, SPIE Proceedings, Poland, 07 Paź 1996
     10.1117/12.280718 
  • P. Górski, M. Kin, W. Kucharczyk, On the application of a generalized form of Miller's coefficient to nonlinear refractive indices in partially ionic crystals, J. Phys. D: Appl. Phys. 30(7), 1111-1114, 1997
     10.1088/0022-3727/30/7/007 
  • W. Nakwaski, R. Sarzała, Analysis of transverse modes in gain-guided vertical-cavity surface-emitting lasers, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 10-13 Lis 1997
     10.1109/leos.1997.645429 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(9), 883-892, 1997
     10.1023/A:1018525616214 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(6), 639-649, 1997
     10.1023/A:1018536423966 
  • G. Derfel, B. Gajewska, Dynamics of the field induced twist deformation in the weakly anchored nematic layers, Liq. Cryst. 22(3), 297-300, 1997