• M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
  • W. Nakwaski, Modeling of Optical Fields in Complex Multilayered Semiconductor Structures with a Vertical-Cavity Surface-Emitting Laser (VCSEL) As An Example, Polish Academy of Sciences, 14th School on Optoelectronics: "Photonics in Information Processing", str. 113-121, Listopad 2000
  • A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Simulation of Semiconductor Lasers for Optimization of Their Structures for Various Wavelengths of the Output Radiation, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar THERMIC'2000, str. 40-46, Październik 2000
  • T. Czyszanowski, Possible Optimization of Arsenide Diode Lasers for Their Operation at Elevated Temperatures, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar, THERMIC 2000, str. 27-33, Październik 2000
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, Novel Design Proposed for Nitride VCSELs, International Workshop on Nitride Semiconductors, IWN2000, str. 889-891, Wrzesień 2000
  • W. Nakwaski, P. Maćkowiak, Features of Possible Nitride Vertical-Cavity Surface-Emitting Lasers (VCSELs) for a Room-Temperature Continuous-Wave Operation, Workshop "Microtechnology, Thermal Problems in Electronics", The Summer School, Wrzesień 2000
  • P. Maćkowiak, W. Nakwaski, Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers, J. Phys. D: Appl. Phys. 33(6), 642-653, 2000
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. I. Fundamental Principles (invited Paper), Opto-Electron. Rev. 8, 11 -18., 2000
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. II. Models (invited Paper), Opto-Electron. Rev. 8, 19-28, 2000
  • P. Maćkowiak, W. Nakwaski, An Impact of Mismatch-Related Phenomena on a Room-Temperature Operation of Nitride VCSELs, Opt. Appl. 30, 125-140, 2000
  • P. Maćkowiak, W. Nakwaski, Designing Guidelines for Possible Continuous-Wave-Operating Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 33, 642-653, 2000
  • W. Nakwaski, P. Maćkowiak, Nitride VCSELs: Close Future Or Distant Prospects ?, Proc. SPIE 4237 (Laser Technology VI: Progress in Lasers), 97-108, 2000
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Simple Theory of Steam Oxidation of AlAs, Proc. SPIE 3896 (SPIE International Symposium on Photonics and Applications, ISPA'99, Singapore 30Nov-3Dec 1999), 534-546, 2000
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Simple theory of steam oxidation of AlAs, SPIE Proceedings, 30 Lis-03 Gru 1999
  • E. C. Yu, M. Z. Pindera, A. J. Przekwas, G. A. Smolyakov, W. Nakwaski, M. Osiński, Multidisciplinary design tools for VCSEL devices and compact electronic packages, Physics and Simulation of Optoelectronic Devices VII, 25-29 Sty 1999
  • G. A. Smolyakov, V. A. Smagley, W. Nakwaski, P. G. Eliseev, M. Osiński, Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method, Physics and Simulation of Optoelectronic Devices VII, 25-29 Sty 1999
  • P. Maćkowiak, W. Nakwaski, Optimal Configurations of Active Regions in Nitride VCSELs, International Conference on Transparent Optical Networks, ICTON'99, Czerwiec 1999
  • P. Maćkowiak, W. Nakwaski, [], Opt. Quant. Electron. 31(11), 1179-1188, 1999
  • G. A. Smolyakov, V. A. Smaglev, W. Nakwaski, P. G. Eliseev, M. Osiński, Design of InGaN/GaN/AlGaN VCSELs Using the Effective Frequency Method, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices VII), 324-335., 1999
  • E. C. Yu, H. M. Pindera, A. J. Przekwas, G. A. Smolyakov, W. Nakwaski, M. Osiński, Multi-Disciplinary Design Tools for VCSEL Devices and Compact Electronic Packages, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices), 383-394, 1999
  • M. Turowski, E. C. Yu, A. J. Przekwas, W. Nakwaski, M. Osiński, 3-D Simulation of Thermal Phenomena in Arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs), Electron Technology 32, 220-226, 1999
  • P. Maćkowiak, W. Nakwaski, On a Possible Room-Temperature Operation of Nitride VCSELs, Scientific Bulletin of Tech. Univ. of Łódź, Physics 19, 39-49, 1999
  • W. Nakwaski, P. Maćkowiak, Thermal Aspects of Semiconductor Lasers Designing (invited Paper), Workshop Microtechnology, Thermal Problems in Electronics, MICROTHERM'98, Summer School on Microtechnologies, str. 29-39, Wrzesień 1998
  • A. Brozi, P. Maćkowiak, R. Sarzała, K. Łazarow, W. Nakwaski, Semiconductor Lasers Properties Investigations by Computer Simulations, Workshop Microtechnology, Thermal Problems in Electronics, MICROTHERM'98, The Seminar Thermic'98, Wrzesień 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal crosstalk in arrays of proton-implanted top-surface-emitting lasers, Physics and Simulation of Optoelectronic Devices VI, United States, 26 Sty 1998
  • M. Turowski, E. C. Yu, A. J. Przekwas, W. Nakwaski, M. Osiński, 3D Simulation of Thermal Phenomena in Arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs), 5th International Conference on Mixed Design of Integrated Circuits, Systems, MIXDES'98, str. 177-182, Czerwiec 1998
  • P. Maćkowiak, W. Nakwaski, Threshold Currents of Nitride VCSELs with Various Active Regions, Third European GaN Workshop, Czerwiec 1998
  • W. Nakwaski, R. Sarzała, Transverse modes in gain-guided vertical-cavity surface-emitting lasers, Opt. Commun. 148(1-3), 63-69, 1998
  • W. Nakwaski, R. Sarzała, High-order transverse modes in vertical-cavity surface-emitting lasers, Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics, Poland, 16-20 Wrz 1996
  • W. Nakwaski, M. Osiński, III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progress in Optics, Elsevier, str. 165-262, 1998
  • W. Nakwaski, R. Sarzała, Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Opt. Commun. 148, 63 - 69, 1998
  • W. Nakwaski, M. Osiński, Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progr. Opt. XXXVIII, 165-262, 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal Crosstalk in Arrays of Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 3283 (Physics and Simulation of Optoelectronic Devices VI), 384-395, 1998
  • W. Nakwaski, Analiza Trendów Rozwojowych Azotkowych Laserów Złączowych Oraz Możliwości Ich Wytwarzania Na Podłożu GaN, Elektronika 39, 07-10, 1998
  • J. Wilk, R. Sarzała, W. Nakwaski, The Spatial Hole Burning Effect in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, L11-L15,, 1998
  • P. Maćkowiak, W. Nakwaski, Detailed Threshold Analysis of UV-Emitting Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, 2479-2484, 1998
  • W. Nakwaski, Some Unsolved Problems Associated with Designing of Nitride Lasers (invited Paper), Opto-Electron. Rev. 6, 93-110, 1998
  • W. Nakwaski, A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, Computer Simulations of Operations of Various Designs of Semiconductor Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 18, 51-58, 1998
  • P. Maćkowiak, W. Nakwaski, Prospects for Nitride Vertical-Cavity Surface­-Emitting Lasers, Proc. SPIE 3490 (Optics in Computing, OC'98, Brugge (Belgium) 17­20 June, 1998), 331-334, 1998
  • R. Sarzała, W. Nakwaski, Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 144(6), 421-425, 1997
  • W. Nakwaski, R. Sarzała, Analysis of Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Lasers, Electro-Optics Society 1997 Annual Meeting, LEOS'97, str. 2 - 293-294, Listopad 1997
  • W. Nakwaski, <title>Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, Poland, 23 Wrz 1996
  • M. Izdebski, M. Rak, A. Brozi, <title>Monte Carlo model of crystal growth with solvation</title>, SPIE Proceedings, Poland, 07 Paź 1996
  • W. Nakwaski, R. Sarzała, Analysis of transverse modes in gain-guided vertical-cavity surface-emitting lasers, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 10-13 Lis 1997
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(9), 883-892, 1997
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(6), 639-649, 1997
  • W. Nakwaski, W. L. Johnson, M. Osiński, Methodology of Parallelization Used in Simulation of Thermal Behaviour of Large Two-Dimensional Arrays of Semiconductor Lasers, Electron Technology 30, 287-297, 1997
  • W. Nakwaski, R. Sarzała, Verification of Usability of Simple Discrimination Mechanisms for Higher-Order Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 298-305, 1997
  • P. Maćkowiak, W. Nakwaski, Threshold Evaluation of GaN/AlGaN/AlN Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 314-323, 1997
  • J. Wilk, R. Sarzała, W. Nakwaski, DBR Mirror Properties in Real Operating Conditions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Int. J. Optoelectr. 11, 333-337, 1997