Wyczyść filtry
  • M. Rak, A. Brozi, J. ŻMIJA, Estimation of surface supersaturation in Monte Carlo simulations of single crystal growt, Journal of Achievements of Materials and Manufacturing Engineering 41(1-2), 91-95, 2010
  • W. Nakwaski, Comparative analysis of methods used to suppress higher-order transverse modes in vertical-cavity surface-emitting diode lasers, Elektronika : konstrukcje, technologie, zastosowania 51, 32-34, 2010
  • W. Nakwaski, R. Sarzała, M. Kuc, Mody laserów złączowych z poprzecznym rezonatorem (typu VCSEL), Elektronika : konstrukcje, technologie, zastosowania 2010(nr 1), 14-16, 2010
  • R. Sarzała, Wpływ montażu lasera kaskadowego na wzrost temperatury w jego wnętrzu, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 10), 102-106, 2010
  • M. Wasiak, R. Sarzała, W. Nakwaski, Właściwości cieplne wybranych konstrukcji laserów kaskadowych, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 1), 32-34, 2010
  • M. Kuc, R. Sarzała, Model termiczny lasera azotkowego, Elektronika : konstrukcje, technologie, zastosowania 2010(nr 10), 83-86, 2010
  • P. Kowalczewski, W. Nakwaski, R. Sarzała, Photonic crystal used to increase extraction efficiency of ZnO light-emitting diodes, Photonics Letters of Poland 2(4), 186-188, 2010
  • A. Szerling, P. Karbownik, K. Kosiel, J. Kubacka-Traczyk, E. Pruszyńska-Karbownik, M. Płuska, M. Bugajski, Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology, Acta Phys. Pol. A 116(Supplement), S-45-S-47, 2009
     10.12693/aphyspola.116.s-45 
  • E. Pruszyńska-Karbownik, P. Karbownik, A. Szerling, K. Kosiel, M. Bugajski, The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers, Acta Phys. Pol. A 116(Supplement), S-60-S-61, 2009
     10.12693/aphyspola.116.s-60 
  • K. Kosiel, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, M. Bugajski, Molecular Beam Epitaxy Growth for Quantum Cascade Lasers, Acta Phys. Pol. A 116(5), 806-813, 2009
     10.12693/APhysPolA.116.806 
  • K. Kosiel, A. Szerling, P. Karbownik, J. Kubacka-Traczyk, E. Pruszyńska-Karbownik, A. Trajnerowicz, M. Bugajski, Development of (λ∼9.4µm) GaAs-based quantum cascade lasers, 2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, Turkey, 03-06 Lis 2009
     10.1109/teramir.2009.5379636 
  • A. Szerling, P. Karbownik, E. Pruszyńska-Karbownik, K. Kosiel, M. Bugajski, S. Adhi, T. J. Ochalski, G. Huyet, Electrical and optical characterisation of (λ∼9.4µm) GaAs-based quantum cascade lasers, 2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, Turkey, 03-06 Lis 2009
     10.1109/TERAMIR.2009.5379622 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs, Applied Physics A: Materials Science and Processing 98(3), 651-657, 2009
     10.1007/s00339-009-5459-9 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, W. Nakwaski, K. Panajotov, Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal, Physica Status Solidi (A) Applications and Materials 206(7), 1396-1403, 2009
     10.1002/pssa.200824499 
  • M. Wasiak, R. Sarzała, A. Jasik, Temperature reduction in vertical-external-cavity surface-emitting-lasers (VECSEL) active region, 2009 11th International Conference on Transparent Optical Networks, Portugal, 28 Cze-02 Lip 2009
     10.1109/ICTON.2009.5185028 
  • K. Marszalek, R. Sarzała, W. Nakwaski, Comparative analysis of various methods to reach the 1.3-µm emission in GaInNAs/GaAs QW VCSELs, 2009 11th International Conference on Transparent Optical Networks, Portugal, 28 Cze-02 Lip 2009
     10.1109/ICTON.2009.5185165 
  • M. Kuc, R. Sarzała, W. Nakwaski, Analysis of excitation of higher-order transverse modes in large-size oxide-confined VCSELs, 2009 11th International Conference on Transparent Optical Networks, Portugal, 28 Cze-02 Lip 2009
     10.1109/ICTON.2009.5185164 
  • M. Dems, Modelling of photonic-crystal VCSELs with semi-vectorial and vectorial models, 2009 11th International Conference on Transparent Optical Networks, Portugal, 28 Cze-02 Lip 2009
     10.1109/ICTON.2009.5185268 
  • T. Czyszanowski, M. Wasiak, R. Sarzała, M. Dems, W. Nakwaski, K. Panajotov, Continues-wave single-mode operation of quantum-dot photonic-crystal 1300 nm VCSEL, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Germany, 14-19 Cze 2009
     10.1109/CLEOE-EQEC.2009.5192793 
  • M. Dems, K. Panajotov, W. Nakwaski, Polarization Control in VCSELs with Photonic Crystals, 7th Belarusian-Russian Workshop "Semiconductor Lasers and Systems", str. 39-43, Czerwiec 2009
  • M. Wasiak, Quantum-enhanced uniformity of carrier injection into successive quantum wells of multi-quantum-well structures, Physica E: Low-Dimensional Systems and Nanostructures 41(7), 1253-1257, 2009
     10.1016/j.physe.2009.02.013 
  • T. Czyszanowski, R. Sarzała, M. Dems, W. Nakwaski, H. Thienpont, K. Panajotov, Optimal photonic-crystal parameters assuring single-mode operation of 1300 nm AlInGaAs vertical-cavity surface-emitting laser, J. Appl. Phys. 105(9), 093102, 2009
     10.1063/1.3115449 
  • M. Dems, Semivectorial method based on effective index for VCSEL analysis, J. Opt. Soc. Am. B 26(4), 792, 2009
     10.1364/JOSAB.26.000792 
  • D. Xu, C. Tong, S. F. Yoon, W. Fan, D. H. Zhang, M. Wasiak, Ł. Piskorski, K. Gutowski, R. Sarzała, W. Nakwaski, Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication, Semicond. Sci. Technol. 24(5), 055003, 2009
     10.1088/0268-1242/24/5/055003 
  • T. Czyszanowski, Discrimination of higher-order modes in photonic-crystal VCSEL, 2009 IEEE/LEOS Winter Topicals Meeting Series, Austria, 12-14 Sty 2009
     10.1109/LEOSWT.2009.4771634 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication, Opto-Electron. Rev. 17(3), 217-224, 2009
     10.2478/s11772-008-0067-3 
  • J. LeClech, M. Ziegler, J. Mukherjee, J. W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J. G. Mclnerney, J. P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, R. Sarzała, Microthermography of diode lasers: The impact of light propagation on image formation, J. Appl. Phys. 105(1), 014502, 2009
     10.1063/1.3055356 
  • M. Dems, Semi-Vectorial Method Based on Effective Index for VCSEL Analysis, J. Opt. Soc. Am. B 26, 792-796, 2009
  • T. Czyszanowski, R. Sarzała, M. Dems, W. Nakwaski, H. Thienpont, K. Panajotov, Optimal Photonic-Crystal Parameters Assuring Single-Mode Operation of 1300nm AlInGaAs Vertical-Cavity Surface-Emitting Laser, J. Appl. Phys. 105, 093102, 2009
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, W. Nakwaski, K. Panajotov, Strong Modes Discrimination and Low Threshold in Cw Regime of 1300nm AlInGaAs/InP VCSEL Induced by Photonic Crystal, Phys. Stat. Sol. (a) 206, 1396-1403, 2009
  • A. Pabjańczyk, R. Sarzała, M. Wasiak, M. Bugajski, Kwantowe lasery kaskadowe - podstawy fizyczne, Elektronika : konstrukcje, technologie, zastosowania 2009(nr 5), 30-43, 2009
  • M. Dems, Semivectorial method based on effective index for VCSEL analysis, J. Opt. Soc. Am. B B/Vol. 26 No.4, 792–796, 2009
  • M. Kuc, R. Sarzała, Thermal model of nitride edge-emitting laser diodes, Opt. Appl. 39(4), 663-672, 2009
  • A. Wójcik-Jedlińska, M. Wasiak, K. Kosiel, M. Bugajski, Photoluminescence characterization of AlGaAs/GaAs test superlattices used for optimization of quantum cascade laser technology, Opt. Appl. 39, 967-974, 2009
  • S. Morawiec, P. Kowalczewski, R. Sarzała, An impact of the electrical pumping scheme on some VCSEL performance characteristics, Opt. Appl. 39(4), 691-699, 2009
  • K. Tkacz, R. Sarzała, W. Nakwaski, Performance characteristics of variously detuned VCSELs, Opt. Appl. 39(4), 729-737, 2009
  • K. Kosiel, M. Bugajski, A. Szerling, J. Kubacka-Traczyk, P. Karbownik, E. Pruszyńska-Karbownik, J. Muszalski, A. Łaszcz, P. Romanowski, M. Wasiak, W. Nakwaski, I. Makarowa, P. Perlin, 77K operation of AlGaAs/GaAs quantum cascade laser at 9 um, Photonics Letters of Poland 1(no 1), 16-18, 2009
  • M. Dems, K. Panajotov, Photonic Crystals As a New Method of Providing Stable Polarization Emission in Vertical-Cavity Surface-Emitting Lasers, Photonics 2008: International Conference on Fiber and Photonics, Grudzień 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Performance Characteristics of GaAs-Based Oxide-Confined In(Ga)As/GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Diode Lasers, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Cze 2008
     10.1109/ICTON.2008.4598618 
  • R. Sarzała, O. Jozefowicz, W. Nakwaski, Comparison of the room-temperature threshold operation of index- and gain-guided oxide-confined VCSELs, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Cze 2008
     10.1109/ICTON.2008.4598789 
  • L. Olejniczak, R. Sarzała, W. Nakwaski, Comparative Analysis of Thermal Properties of Various Quantum-Cascade Lasers, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Cze 2008
     10.1109/ICTON.2008.4598788 
  • M. Dems, K. Panajotov, Applications of Photonic Crystals for Polarisation Stabilisation in VCSELs, 2008 10th Anniversary International Conference on Transparent Optical Networks, Greece, 22-26 Cze 2008
     10.1109/ICTON.2008.4598591 
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs, Opt. Commun. 281(11), 3163-3170, 2008
     10.1016/j.optcom.2008.02.011 
  • M. Dems, T. Czyszanowski, H. Thienpont, K. Panajotov, Highly birefringent and dichroic photonic crystal VCSEL design, Opt. Commun. 281(11), 3149-3152, 2008
     10.1016/j.optcom.2008.01.060 
  • M. Dems, K. Panajotov, Applications of Photonic Crystals for Polarisation Stabilisation in VCSELs, 10th International Conference on Transparent Optical Networks, ICTON 2008, str. 2 - 56-59, Czerwiec 2008
  • R. Sarzała, M. Kuc, K. Gutowski, W. Nakwaski, Unusual transverse-mode selectivity in some detuned VCSELs, SPIE Proceedings, France, 07-09 Kwi 2008
     10.1117/12.780880 
  • T. Czyszanowski, R. Sarzała, M. Dems, W. Nakwaski, K. Panajotov, Single-Mode Photonic Crystal VCSELs, COST MP0702 Kick-off Workshop, str. 59, Kwiecień 2008
  • D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, <title>Analysis of facet heating in semiconductor lasers</title>, SPIE Proceedings, Ukraine, 12-17 Wrz 2005
     10.1117/12.793319 
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography, Appl. Phys. Lett. 92(10), 103513, 2008
     10.1063/1.2898199 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes, Microelectr. J. 39(3-4), 638-640, 2008
     10.1016/j.mejo.2007.07.049 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, K. Panajotov, Threshold characteristics of bottom-emitting long wavelength VCSELs with photonic-crystal within the top mirror, Opt. Quant. Electron. 40(2-4), 149-154, 2008
     10.1007/s11082-008-9198-5 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL, J. Phys. D: Appl. Phys. 41(8), 085102, 2008
     10.1088/0022-3727/41/8/085102 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs, Microelectr. J. 39(3-4), 641-643, 2008
     10.1016/j.mejo.2007.07.048 
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers, Opto-Electron. Rev. 16(1), 27-33, 2008
     10.2478/s11772-007-0035-3 
  • W. Nakwaski, Principles of VCSEL designing, Opto-Electron. Rev. 16(1), 18-26, 2008
     10.2478/s11772-007-0028-2 
  • K. Gutowski, R. Sarzała, W. Nakwaski, Investigation of operational characteristics and possibility of obtaining highly detuned GaInNAsSb VCSEL, str. 445-448, Styczeń 2008
     10.1002/pssc.200777451 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures, Opto-Electron. Rev. 16(1), 34-41, 2008
     10.2478/s11772-007-0027-3 
  • M. Dems, T. Czyszanowski, H. Thienpont, K. Panajotov, Highly Birefringent and Dichroic Photonic-Crystal VCSEL Design, Opt. Commun. 281, 3149-3152, 2008
  • K. Gutowski, R. Sarzała, W. Nakwaski, Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs., Microelectr. J. No 39, 641-643, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: excitation of various transverse LPij modes, Microelectr. J. No.39(3-4), 638-640, 2008
  • K. Gutowski, R. Sarzała, Computer simulation of tuned and detuned GaInNAsSb QW VCSELs for long-wavelength applications:, Mater. Sci. 26(1), 45-53, 2008
  • M. Ziegler, J. W. Tomm, T. Elsaesser, G. Erbert, F. Bugge, W. Nakwaski, R. Sarzała, Visualization of heat flows in high-power diode lasers by lock-in thermography., Appl. Phys. Lett. 92, 103513, 2008
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures., Opto-Electron. Rev. 16(1), 34-41, 2008
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs., Opt. Commun. 281(11), 3163–3170, 2008
  • P. Karbownik, R. Sarzała, Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers:, Opto-Electron. Rev. 16(1), 68-74, 2008
  • W. Nakwaski, Principles of VCSEL designing, Opto-Electron. Rev. 16(1), 18-26, 2008
  • E. Gęsikowska, W. Nakwaski, An impact of multi-layered structures of modern optoelectronic devices on their thermal properties, Opt. Quant. Electron. 40(2-4), 205-216, 2007
     10.1007/s11082-007-9151-z 
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used to Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43(11), 1041-1047, 2007
     10.1109/JQE.2007.904492 
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers, Physica Status Solidi (A) Applications and Materials 204(10), 3562-3573, 2007
     10.1002/pssa.200622559 
  • A. Kozłowska, M. Szymański, E. Pruszyńska-Karbownik, M. Bugajski, R. Pomraenke, C. Lienau, J. Renard, A. Maląg, Tailoring of optical mode profiles of high-power diode lasers evidenced by near-field photocurrent spectroscopy, Appl. Phys. Lett. 91(10), 101103, 2007
     10.1063/1.2779846 
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers, J. Lightwave Technol. 25(9), 2331-2336, 2007
     10.1109/JLT.2007.901520 
  • M. Dems, K. Panajotov, Modeling of single- and multimode photonic-crystal planar waveguides with the plane-wave admittance method, Appl. Phys. B: Lasers Opt. 89(1), 19-23, 2007
     10.1007/s00340-007-2756-x 
  • T. Czyszanowski, R. Sarzała, M. Dems, H. Thienpont, K. Panajotov, Optimal Designs of Telecommunications Oriented Photonic-Crystal VCSELs, 2007 9th International Conference on Transparent Optical Networks, Italy, 01-05 Lip 2007
     10.1109/ICTON.2007.4296136 
  • T. Czyszanowski, M. Dems, R. Sarzała, H. Thienpont, K. Panajotov, Optimal Designs of Telecommunications Oriented Photonic-Crystal VCSELs, 9th International Conference on Transparent Optical Networks, ICTON 2007, str. 2 - 44-47, Lipiec 2007
  • A. Kozłowska, M. Ziegler, J. W. Tomm, R. Sarzała, W. Nakwaski, Thermal Imaging of Actively Cooled High-Power Laser Bars, 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems, Poland, 21-23 Cze 2007
     10.1109/MIXDES.2007.4286191 
  • T. Czyszanowski, K. Panajotov, M. Dems, Designs of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers assuring high performance with minimal technological effort, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, Germany, 17-22 Cze 2007
     10.1109/CLEOE-IQEC.2007.4385927 
  • Ł. Piskorski, The Influence of Temperature Changes on An Operation of the GaInP/AlGaInP Vertical-Cavity Surface-Emitting Diode Laser, Microtherm 2007: VII Conference Thermal Problems in Electronics, Czerwiec 2007
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, Transient thermal properties of high-power diode laser bars, 2007 Quantum Electronics and Laser Science Conference, United States, 06-11 Maj 2007
     10.1109/QELS.2007.4431381 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, Transient thermal properties of high-power diode laser bars, 2007 Conference on Lasers and Electro-Optics (CLEO), United States, 06-11 Maj 2007
     10.1109/CLEO.2007.4453604 
  • T. Czyszanowski, W. Nakwaski, Comparison of Exactness of Scalar and Vectorial Optical Methods Used to Model a VCSEL Operation, IEEE J. Quantum. Electron. 43(5), 399-406, 2007
     10.1109/JQE.2006.894738 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Thermal Properties of the 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, Fifth International Conference on Solid State Crystals \& Eight Polish Conference on Crystal Growth – ICSSC-5 \& PCCG-8 Conference, Maj 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(6), 593-600, 2007
     10.1088/0268-1242/22/6/002 
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50−1.55 μm wavelength range, J. Appl. Phys. 101(7), 073103, 2007
     10.1063/1.2719009 
  • T. Czyszanowski, M. Dems, K. Panajotov, Impact of the hole depth on the modal behaviour of long wavelength photonic crystal VCSELs, J. Phys. D: Appl. Phys. 40(9), 2732-2735, 2007
     10.1088/0022-3727/40/9/009 
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Advanced Computer Simulation of the 650-nm Room-Temperature Continuous-Wave Operation of the GaInP/AlGaInP QW VCSEL, The Sixth International Conference on Low Dimensional Structures and Devices, LDSD2007, Kwiecień 2007
  • T. Czyszanowski, R. Sarzała, M. Dems, K. Panajotov, Photonic-Crystal VCSELs, International Workshop on Advances in Physics and Technology of Photonic Crystals, str. 20, Kwiecień 2007
  • R. Kotyński, M. Dems, M. Antkowiak, K. Panajotov, Radiation Losses of Electrically and Magnetically Anisotropic 2D Finite Photonic Crystals, International Workshop on Advances in Physics and Technology of Photonic Crystals, str. 19, Kwiecień 2007
  • M. Dems, T. Czyszanowski, K. Panajotov, Strongly Birefringent and Dichroic VCSEL, International Workshop on Advances in Physics and Technology of Photonic Crystals, str. 18, Kwiecień 2007
  • R. Kotyński, M. Dems, K. Panajotov, Waveguiding losses of micro-structured fibres—plane wave method revisited, Opt. Quant. Electron. 39(4-6), 469, 2007
     10.1007/s11082-007-9092-6 
  • M. Dems, T. Czyszanowski, K. Panajotov, Numerical analysis of high Q-factor photonic-crystal VCSELs with plane-wave admittance method, Opt. Quant. Electron. 39(4-6), 419-426, 2007
     10.1007/s11082-007-9090-8 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Modal behavior of photonic-crystal vertical-cavity surface-emitting diode laser analyzed with Plane Wave Admittance Method, Opt. Quant. Electron. 39(4-6), 427-433, 2007
     10.1007/s11082-007-9087-3 
  • T. Czynanowski, M. Dems, K. Panajotov, Design of Long Wavelength VCSEL with Photonic Crystal in the Top DBRs, International Workshop on PHysics \& Applications of SEmiconductor LASERs, PHASE 2007, Marzec 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Mode Selectivity of 650-nm GaInP/AlGaInP Quantum-Well GaAs-Based Vertical-Cavity Surface-Emitting Diode Lasers, International Workshop on PHysics \& Applications of SEmiconductor LASERs, Marzec 2007
  • M. Dems, T. Czyszanowski, K. Panajotov, Polarization Control in Photonic-Crystal VCSELs with Elliptical Holes, International Workshop on PHysics \& Applications of SEmiconductor LASERs, PHASE 2007, Marzec 2007
  • Ł. Piskorski, M. Wasiak, R. Sarzała, W. Nakwaski, Simulation and Optimization of 1.3-μm Oxide-Confined Quantum-Dot Vertical-Cavity Surface-Emitting Lasers, polsko-singapurska konferencja, Luty 2007
  • P. Bienstman, S. Selleri, L. Rosa, H. P. Uranus, W. C. L. Hopman, R. Costa, A. Melloni, L. C. Andreani, J. P. Hugonin, P. Lalanne, D. Pinto, S. S. A. Obayya, M. Dems, K. Panajotov, Modelling leaky photonic wires: A mode solver comparison, Opt. Quant. Electron. 38(9-11), 731-759, 2007
     10.1007/s11082-006-9025-9 
  • T. Czyszanowski, W. Nakwaski, How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?, Opto-Electron. Rev. 15(2), 88-97, 2007
     10.2478/s11772-007-0001-0 
  • T. Czyszanowski, M. Dems, K. Panajotov, Single mode condition and modes discrimination in photonic-crystal 1.3 μm AlInGaAs/InP VCSEL, Opt. Express 15(9), 5604, 2007
     10.1364/OE.15.005604 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Optimal radii of photonic crystal holes within DBR mirrors in long wavelength VCSEL, Opt. Express 15(3), 1301, 2007
     10.1364/OE.15.001301 
  • T. Czyszanowski, M. Dems, K. Panajotov, Impact of the Hole Depth on the Modal Behaviour of Long Wavelength Photonic Crystal VCSELs, J. Phys. D: Appl. Phys. 40, 2732-2735, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Single Mode Condition and Modes Discrimination in Photonic-Crystal 1.3 μm AlInGaAs/InP VCSEL, Opt. Express 15, 5604-5609, 2007
  • M. Dems, K. Panajotov, Modeling of Single- and Multimode Photonic-Crystal Planar waveguides with Plane-Wave Admittance Method, Appl. Phys. B: Lasers Opt. 89, 19-23, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal Parameters of Photonic-Crystal Vertical-Cavity Surface-Emitting Diode Lasers, J. Lightwave Technol. 25, 2331-2336, 2007
  • T. Czyszanowski, R. Sarzała, Ł. Piskorski, M. Dems, M. Wasiak, W. Nakwaski, K. Panajotov, Comparison of Usability of Oxide Apertures and Photonic Crystals Used To Create Radial Optical Confinements in 650-nm GaInP VCSELs, IEEE J. Quantum. Electron. 43, 1041-1047, 2007
  • Ł. Piskorski, R. Sarzała, W. Nakwaski, Self-Consistent Model of the 650-nm GaInP/AlGaInP Quantum-Well Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22 (6), 593-600, 2007
  • R. Sarzała, Optimization of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, Semicond. Sci. Technol. 22, 113-118, 2007
  • R. Sarzała, W,, Nakwaski,, GaInNAsSb/GaNAs Quantum-Well VCSELs: Modeling and Physical Analysis in the 1.50-1.55 μm Wavelength Range, J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, M. Dems, K. Panajotov, Optimal parameters of photonic-crystal vertical-cavity surface-emitting diode lasers., J. Lightwave Technol. 25 No. 9, 2331-2335, 2007
  • T. Czyszanowski, W. Nakwaski, Scalar and vectorial approaches to cavity modes of the GaAs-based 1.3-μm oxide-confined edge emitting diode laser., Opt. Appl. 37 No. 3, 209-218, 2007
  • T. Czyszanowski, M. Wasiak, R. Sarzała, W. Nakwaski, Exactness of simplified scalar optical approaches in modelling a threshold operation of possible nitride vertical-cavity surface-emitting diode lasers., Physica Status Solidi (A) Applications and Materials 204 No. 10, 3562-3573, 2007
  • T. Czyszanowski, W. Nakwaski, Comparison of exactness of scalar and vectorial optical methods used to model a VCSEL operation., IEEE J. Quantum. Electron. 43 No. 5, 399-406, 2007
  • R. Sarzała, W. Nakwaski, GaInNAsSb/GaNAs quantum-well VCSELs: modeling and physical analysis in the 1.50 – 1.55 μm wavelength range., J. Appl. Phys. 101, 073103, 2007
  • T. Czyszanowski, W. Nakwaski, How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?, Opto-Electron. Rev. 15 (2), 88-97, 2007
  • R. Sarzała, Optimization of oxide-confined vertical-cavity surface-emitting diode lasers, Semicond. Sci. Technol. 22(2), 113-118, 2006
     10.1088/0268-1242/22/2/019 
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high-power diode laser bars, Appl. Phys. Lett. 89(26), 263506, 2006
     10.1063/1.2424644 
  • E. Pruszyńska-Karbownik, M. Wasiak, W. Nakwaski, Theoretical Analysis of Red-shift and Optical Gain in the Step-like GaInNAs/GaNAs Quantum Well, 2006 International Conference on Transparent Optical Networks, United Kingdom, 18-22 Cze 2006
     10.1109/ICTON.2006.248528 
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure, J. Appl. Phys. 99(12), 123110, 2006
     10.1063/1.2206129 
  • R. Sarzała, W. Nakwaski, Comparative Analysis of Various Designs of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, 2006 International Conference on Transparent Optical Networks, United Kingdom, 18-22 Cze 2006
     10.1109/ICTON.2006.248527 
  • M. Dems, K. Panajotov, Modeling of Single-and Multimode Photonic-Crystal Planar Waveguides with Plane-wave Admittance Method: Losses and Modes Coupling, 2006 International Conference on Transparent Optical Networks, United Kingdom, 18-22 Cze 2006
     10.1109/ICTON.2006.248486 
  • T. Czyszanowski, M. Dems, K. Panajotov, W. Nakwaski, Crucial Parameters of Photonic-Crystal Holes within Photonic-Crystal VCSEL DBR, 2006 International Conference on Transparent Optical Networks, United Kingdom, 18-22 Cze 2006
     10.1109/ICTON.2006.248369 
  • R. Kotyński, M. Dems, K. Panajotov, Waveguiding Losses of Microstructured Fibers - Plane Wave Method Revisited, Physics of Photonic Crystals and Metamaterials, PPCM'06, Czerwiec 2006
  • T. Czyszanowski, M. Dems, K. Panajotov, Mode Confinement by Photonic-Crystal DBRs Incorporated in VCSEL Structures, Physics of Photonic Crystals and Metamaterials, PPCM'06, Czerwiec 2006
  • M. Dems, T. Czyszanowski, K. Panajotov, Modeling a Low-Loss Photonic-Crystal VCSEL with Plane-Wave Admittance Method, Physics of Photonic Crystals and Metamaterials, PPCM'06, Czerwiec 2006
  • R. Sarzała, W. Nakwaski, Comparative Analysis of Various Designs of Oxide-Confined Vertical-Cavity Surface-Emitting Diode Lasers, 8th International Conference on Transparent Optical Networks, ICTON 2006, str. 4 - 160-163, Czerwiec 2006
  • M. Dems, K. Panajotov, Modeling of Single- and Multimode Photonic-Crystal Planar Waveguides with Plane-Wave Admittance Method: Losses and Modes Coupling, 8th International Conference on Transparent Optical Networks, ICTON 2006, str. 4 - 245-248, Czerwiec 2006
  • E. Pruszyńska-Karbownik, M. Wasiak, W. Nakwaski, Theoretical Analysis of Red-Shift and Optical Gain in the Step-Like GaInNAs/GaNAs Quantum Well, 8th International Conference on Transparent Optical Networks, ICTON 2006, str. 4 - 164-166, Czerwiec 2006
  • T. Czyszanowski, M. Dems, K. Panajotov, W. Nakwaski, Crucial Parameters of Photonic-Crystal Holes Within Photonic-Crystal VCSEL DBR, 8th International Conference on Transparent Optical Networks, ICTON 2006, str. 2 - 181-184, Czerwiec 2006
  • M. Dems, T. Czyszanowski, K. Panajotov, Plane-wave and cylindrical-wave admittance method for simulation of classical and photonic-crystal-based VCSELs, SPIE Proceedings, France, 03-06 Kwi 2006
     10.1117/12.662869 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Full vectorial electromagnetic modeling of vertical-cavity surface-emitting diode lasers by the plane wave admittance method, SPIE Proceedings, France, 03-05 Kwi 2006
     10.1117/12.662658 
  • T. Czyszanowski, M. Dems, H. Thienpont, K. Panajotov, Full Vectorial Electromagnetic Modeling of Vertical-Cavity Surface-Emitting Diode Lasers by the Plane Wave Admittance Method, SPIE Photonics Europe, str. 6185 - 61850Y, Kwiecień 2006
  • M. Dems, T. Czyszanowski, K. Panajotov, Plane-Wave and Cylindrical-Wave Admittance Method for Simulation of Classical and Photonic-Crystal-Based VCSELs,, SPIE Photonics Europe, str. 6182 - 618219, Kwiecień 2006
  • R. Sarzała, W. Nakwaski, Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region, Opt. Quant. Electron. 38(4-6), 293-311, 2006
     10.1007/s11082-006-0030-9 
  • R. Sarzała, W. Nakwaski, Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities, Opt. Quant. Electron. 38(4-6), 325-337, 2006
     10.1007/s11082-006-0035-4 
  • T. Czyszanowski, W. Nakwaski, Validity of Scalar Approaches to Radiation Modes of the GaAs-Based 1.3-μm Diode Lasers Designed for the Optical–Fibre Communication, Opt. Quant. Electron. 38(4-6), 349-360, 2006
     10.1007/s11082-006-0033-6 
  • R. Sarzała, W. Nakwaski, <title>Physics of an operation of vertical cavity surface emitting lasers with oxide apertures</title>, SPIE Proceedings, Poland, 25-29 Wrz 2006
     10.1117/12.726647 
  • M. Dems, W. Nakwaski, Modelling of High-Contrast Photonic Crystal Slabs Using the Novel Extension of the Effective Index Method, Opt. Appl. 36, 51-56, 2006
  • T. Czyszanowski, W. Nakwaski, Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers., J. Phys. D: Appl. Phys. 39, 30-35, 2006
  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high- power diode laser bars., Appl. Phys. Lett. 89, 263506, 2006
  • R. Sarzała, W. Nakwaski, Separate-confinement-oxidation vertical-cavity surface-emitting laser structure., J. Appl. Phys. 99 s.123110-1(9), 2006
  • T. Czyszanowski, W. Nakwaski, Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers, J. Phys. D: Appl. Phys. 39(1), 30-35, 2005
     10.1088/0022-3727/39/1/006 
  • R. Sarzała, W. Nakwaski, Methods to enhance mode selectivity of higher-output vertical-cavity surface-emitting diode lasers, SPIE Proceedings, Poland, 28 Sie-02 Wrz 2005
     10.1117/12.619444 
  • D. Wawer, T. J. Ochalski, K. Pierściński, M. Szymański, M. Bugajski, Ł. Piskorski, K. Gutowski, A. Kozłowska, A. Maląg, Analysis of Facet Heating in Semiconductor Lasers, Proceedings of SPIE/Ukraine, vol. 6 (1-6), 2006, str. 6 - 76–82, Wrzesień 2005
  • R. Sarzała, Designing strategy to enhance mode selectivity of higher-output oxide-confined vertical-cavity surface-emitting lasers, Applied Physics A: Materials Science and Processing 81(2), 275-283, 2005
     10.1007/s00339-005-3251-z 
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified k·p method to investigate polarization effects in nitride quantum-well devices, Physica E: Low-Dimensional Systems and Nanostructures 25(4), 504-514, 2005
     10.1016/j.physe.2004.08.002 
  • M. Dems, R. Kotyński, K. Panajotov, Plane Wave Admittance Method - a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13(9), 3196, 2005
     10.1364/OPEX.13.003196 
  • R. Sarzała, An impact of a localization of an oxide aperture within a VCSEL cavity on its lasing threshold., Opt. Appl. 35(no. 3), 636-644, 2005
  • W. Nakwaski, Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers., Opt. Appl. 35, 579-589, 2005
  • R. Sarzała, Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3mm wavelength range., Opt. Appl. 35(no. 2), 225-240, 2005
  • M. Wasiak, M. Bugajski, W. Nakwaski, Envelope function description of quantum cascade laser electronic states., Opt. Appl. 35, 651-654, 2005
  • M. Dems, K. Panajotov, T. Czyszanowski, R. Kotyński, W. Nakwaski, Simulation of photonic crystal diode lasers with plane-wave admittance method, European Symposium on Photonic Crystals, 2005
  • M. Dems, R. Kotyński, K. Panajotov, PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures, Opt. Express 13, 3196-3207, 2005
  • J. Galczak, R. Sarzała, W. Nakwaski, The modified kp approach to investigate polarization effects in nitride quantum-well devices., Physica E: Low-Dimensional Systems and Nanostructures 25, 504-514, 2005
  • R. Sarzała, W. Nakwaski, Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems, IEE P. - Optoelectron. 151(5), 417-420, 2004
     10.1049/ip-opt:20040936 
  • R. P. S. a, W. Nakwaski, Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation, Journal of Physics Condensed Matter 16(31), S3121-S3140, 2004
     10.1088/0953-8984/16/31/009 
  • T. Czyszanowski, M. Dems, W. Nakwaski, Usability Comparison of Scalar and Vectorial Optical Approaches To Simulation of a 1.3μm InGaAsN VCSEL Operation, 6th International Conference on Transparent Optical Networks, str. 1 - 375-376, Lipiec 2004
  • R. Sarzała, Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers, IEEE J. Quantum. Electron. 40(6), 629-639, 2004
     10.1109/JQE.2004.828228 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers, Semicond. Sci. Technol. 19(8), 997-1004, 2004
     10.1088/0268-1242/19/8/008 
  • M. Dems, W. Nakwaski, Simplified Analytical Approach To Stress Problems in Multi-Layered Nitride Devices, International Conferenceon Solid State Crystals, Maj 2004
  • R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, M. Bugajski, W. Nakwaski, Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-μm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 36(4), 331-347, 2004
     10.1023/B:OQEL.0000019967.68715.3d 
  • M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 19(5), 667-667, 2004
     10.1088/0268-1242/19/5/C01 
  • M. Dems, W. Nakwaski, The Enhanced Effective Index Method for High-Contrast Photonic Crystal Slabs, 12th International Workshop on Optical Waveguide Theory and Numerical Modeling, Marzec 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade nitride VCSEL designs with tunnel junctions, Applied Physics A: Materials Science and Processing 78(3), 315-322, 2004
     10.1007/s00339-003-2195-4 
  • A. Tomczyk, R. Sarzała, W. Nakwaski, Fully Self-Consistent Threshold Model of One-Dimensional Arrays of in-Line Nitride Diode Lasers, Semicond. Sci. Technol. 19, 997-1004, 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Cascade Nitride VCSEL Designs with a Tunnel Junctions, Appl. Phys. A: Mat. Sci. \& Process. 78, 315-322, 2004
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. Osiński, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation Kinetics of AlAs and (AlGa)As Layers in Arsenide-Based Diode Lasers: Comparative Analysis of Available Experimental Data, Semicond. Sci. Technol. 19, 333-341, 2004
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL design for continuous-wave operation of higher-order optical modes, Applied Physics A: Materials Science and Processing 77(6), 761-768, 2003
     10.1007/s00339-003-2131-7 
  • W. Nakwaski, M. Wasiak, P. Maćkowiak, W. Bedyk, M. O. ski, A. Passaseo, V. Tasco, M. . Todaro, M. D. Vittorio, R. Joray, J. . Chen, R. . Stanley, A. Fiore, Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data, Semicond. Sci. Technol. 19(3), 333-341, 2003
     10.1088/0268-1242/19/3/007 
  • M. Dems, Modeling of Mechanical Stress Fields in Multi-Layered Structures of Diode Lasers, 1st CEPHONA Workshop on Computer Simulation and Design of Semiconductor Lasers, Listopad 2003
  • W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, <title>Single-photon devices in quantum cryptography</title>, SPIE Proceedings, 2003
     10.1117/12.519752 
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, <title>Simulation of threshold operation of GaInNAs diode lasers</title>, SPIE Proceedings, 2003
     10.1117/12.519754 
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, <title>Designing of possible structures of nitride vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, 2003
     10.1117/12.519746 
  • W. Nakwaski, A. Tomczyk, R. Sarzała, A Possibility To Design Nitride in-Plane Diode-Laser Arrays, European Semiconductor Laser Workshop 2003, str. Paper No 20, Wrzesień 2003
  • P. Maćkowiak, R. P. S. a, M. Wasiak, W. Nakwaski, Radial optical confinement in nitride VCSELs, J. Phys. D: Appl. Phys. 36(17), 2041-2045, 2003
     10.1088/0022-3727/36/17/303 
  • M. Dems, W. Nakwaski, Thermal and molecular stresses in multi-layered structures of nitride devices, Semicond. Sci. Technol. 18(8), 733-737, 2003
     10.1088/0268-1242/18/8/303 
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output power saturation in InAs/GaAs quantum dot lasers, Physica Status Solidi C - Conferences, 1351-1354, 2003
     10.1002/pssc.200303091 
  • B. P. Riely, J. J. Liu, H. Shen, G. Dang, W. H. Chang, Y. Jiang, Z. Sikorski, T. Czyszanowski, A. J. Przekwas, Multiphysics modeling of intracavity-contacted VCSELs, SPIE Proceedings, United States, 27-31 Sty 2003
     10.1117/12.482321 
  • R. Sarzała, Perspektywy Nowych Materiałów i Konstrukcji Półprzewodnikowych Laserów Złączowych Stosowanych w śwtatłowodowych Systemach Telekomunikacji Optycznej II i III Generacji, Konferencja Optoelektronika 2003: Oferta Nauki Polskiej Dla Przemysłu, str. 7-9, Czerwiec 2003
  • W. Nakwaski, R. Sarzała, P. Maćkowiak, M. Wasiak, Wykorzystanie Niestandardowych Własności Azotków Grupy AIIIN Do Optymalizacji Strucktur Azotkowych Laserów Typu VCSEL, II Krajowa Konferencja Elektroniki, str. 2 - 437-442., Czerwiec 2003
  • W. Nakwaski, Dokładna Samouzgodniona Symulacja Działania Laserów Złączowych w Zastosowaniu Do Projektowania i Optymalizacji Ich Struktur, Konferencja Optoelektronika 2003: Oferta Nauki Polskiej Dla Przemysłu, str. 4-6, Czerwiec 2003
  • M. Dems, W. Nakwaski, Thermal, Molecular Stress Generation in Multi-Layered Structures of Nitride Devices, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, str. 51-53, Czerwiec 2003
  • R. Sarzała, P. Mendla, M. Wasiak, P. Maćkowiak, W. Nakwaski, M. Bugajski, Three-Dimensional Comprehensive Self-Consistent Simulation of a Room-Temperature Continuous-Wave Operation of GaAs-Based 1.3-μm Quantum-Dot (InGa)As/GaAs Vertical-Cavity Surface-Emitting Lasers, 5th International Conference on Transparent Optical Networks: ICTON 2003, str. 2 - 95-98, Czerwiec 2003
  • A. Tomczyk, R. Sarzała, W. Nakwaski, Thermal Model of Nitride Edge-Emitting Diode Lasers, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, str. 183-186, Czerwiec 2003
  • M. Dems, W. Nakwaski, The Self-Consistent Method for Determination of a Band Structure in Photonic Crystals with Frequency-Dependent Dielectric Constants, 5th International Conference on Transparent Optical Networks: ICTON 2003, str. 1 - 276-279, Czerwiec 2003
  • W. Nakwaski, R. Sarzała, P. Maćkowiak, Analysis of the Feedback Between Electrical, Thermal Phenomena in Nitride Devices Using a Vertical-Cavity Surface-Emitting Laser As An Example, 5th International Conference "Thermal Problems in Electronics", MicroTherm2003, Czerwiec 2003
  • W. Nakwaski, R. Sarzała, P. Maćkowiak, Mutual Interactions Between Electrical, Thermal Phenomena in Nitride VCSELs Influencing Current Spreading Within Their Volumes, International Conference "Laser Physics, Laser Applications", Maj 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design guidelines for fundamental-mode-operated cascade nitride VCSELs, IEEE Photon. Technol. Lett. 15(4), 495-497, 2003
     10.1109/LPT.2003.809314 
  • W. Nakwaski, R. Sarzała, Designing of 1.3-μm Arsenide VCSELs, International Workshop on GaAs Based Lasers for the 1.3-1.5$\mu$m Wavelength Range, Kwiecień 2003
  • W. Nakwaski, P. MAC´KOWIAK, [], Opt. Quant. Electron. 35(11), 1037-1054, 2003
     10.1023/A:1026068725681 
  • R. Sarzała, [], Opt. Quant. Electron. 35(7), 675-692, 2003
     10.1023/A:1023977203373 
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure optimisation of 1.3 μm (GaIn)(NAs)∕GaAs in-plane lasers, IEE P. - Optoelectron. 150(1), 56, 2003
     10.1049/ip-opt:20030040 
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 150(1), 83, 2003
     10.1049/ip-opt:20030041 
  • A. Tomczyk, R. Sarzała, T. Czyszanowski, M. Wasiak, W. Nakwaski, Fully Self-Consistent Three-Dimensional Model of Edge-Emitting Nitride Diode Lasers, Opto-Electron. Rev. 11, 65-75, 2003
  • W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices in Quantum Cryptography, Opto-Electron. Rev. 11, 127-132, 2003
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, Designing of Possible Structures of Nitride Vertical-Cavity Surface-Emitting Lasers, Opto-Electron. Rev. 11, 119-126, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Threshold Characteristics of GaInNAs Diode Lasers, Opto-Electron. Rev. 11, 139-142, 2003
  • M. Dems, W. Nakwaski, Thermal and Molecular Stresses in Multi-Layered Structures of Nitride Devices, Semicond. Sci. Technol. 18, 733-737, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Radial Optical Confinement in Nitride VCSELs, J. Phys. D: Appl. Phys. 26, 2041-2045, 2003
  • W. Nakwaski, Some Unexpected Behaviours of Nitride Devices Following From Special Features of Nitride Semiconductors, Opto-Electron. Rev. in preparation, 2003
  • W. Nakwaski, P. Maćkowiak, How To Reach a Single-Fundamental-Mode Operation of Nitride VCSELs, Proc. SPIE accepted, 2003
  • M. Osiński, T. Svimonishvili, W. Nakwaski, Analytical Approach To Steam Oxidation of AlAs in Cylindrically Symmetric Mesa Structures, Appl. Phys. Lett. submitted, 2003