Wyczyść filtry
  • R. Sarzała, W. Nakwaski, Carrier Diffusion Inside Active-Regions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 144, 421-425, 1997
  • W. Nakwaski, Self-Consistent Analytical Models of Semiconductor Vertical-Cavity Surface-Emitting Lasers (invited Paper), Proc. SPIE 3186 (Laser Technology V: Physics and Research and Development Trends), 324-338, 1997
  • W. Nakwaski, R. Sarzała, Higher-Order Transverse Modes in Vertical-Cavity Surface-Emitting Lasers, Proc. SPIE 3320 (Wave and Quantum Aspects of Contemporary Optics), 78-96, 1997
  • W. L. Johnson, M. Osiński, W. Nakwaski, Parallelization Strategy in Modeling of Two-Dimensional Arrays of Semiconductor Lasers on An IBM SP2 Supercomputer, High Performance Computing in Europe on IBM Platforms, SUP'EUR '96 Conference, str. 215-220, Wrzesień 1996
  • W. Nakwaski, Samouzgodnione Modele Analityczne Laserów o Emisji Powierzchniowej (typu VCSEL), V Sympozjum Techniki Laserowej, str. 402-413, Wrzesień 1996
  • W. Nakwaski, M. Osiński, Optimization of 1.3-μm InGaAsP/InP Vertical-Cavity Surface-Emitting Diode Lasers, 5th-Polish-Lithuanian Workshop on the Semiconductor Physics and Technology, str. 37808, Czerwiec 1996
  • R. Sarzała, W. Nakwaski, M. Osiński, An Impact of Radial Carrier Diffusion Within the Active Region of the Semiconductor Surface-Emitting Laser on Heat Generation and Sinking Processes During Its Continuous Wave Operation, 5th-Polish-Lithuanian Workshop on the Semiconductor Physics and Technology, str. 37872, Czerwiec 1996
  • W. Nakwaski, Macierze Laserów o Emisji Powierzchniowej, XI Szkoła Optoelektroniki: Fotonika w Przetwarzaniu Informacji, str. 143-158, Maj 1996
  • W. Nakwaski, Symulacje Komputerowe Laserów Złączowych Realizowane w Zespole Fizyki Komputerowej Instytutu Fizyki Politechniki Łódzkiej, I Seminarium "Zagadnienia Termiczne w Elektronice", TERMIK'96, str. 123-128, Maj 1996
  • W. Nakwaski, Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 28(4), 335-352, 1996
     10.1007/BF00287023 
  • W. Nakwaski, Reply To 'Comment on Three-Dimensional Analysis of a Heat-Spreading Phenomenon in Phase-Locked Arrays of Oxide-Isolated Diode Lasers', J. Appl. Phys. 79, 9403, 1996
  • W. Nakwaski, M. Osiński, Thermally Conductive Dielectric Mirrors As a Possible Solution Enabling Continuous Wave Operation of 1.3-μm Vertical-Cavity Surface-Emitting Lasers at Room Temperature, Electron Technology 29, 79-82, 1996
  • R. Sarzała, W. Nakwaski, M. Osiński, Carrier Diffusion in the Active Region of Vertical-Cavity Surface-Emitting Lasers and Its Influence on Their Operation, Electron Technology 29, 83-87, 1996
  • M. Osiński, W. Nakwaski, Thermal Analysis of 1.3-μm Etched-Well Surface-Emitting Lasers with Dielectric Mirrors, 8th Lasers and Electro-Optics Society Annual Meeting, LEOS'95, Październik 1995
  • R. Sarzała, W. Nakwaski, M. Osiński, Finite-Element Comprehensive Thermal Modeling of Proton-Implanted Top-Surface-Emitting Lasers, 8th Lasers and Electro-Optics Society Annual Meeting, LEOS'95, Październik 1995
  • W. Nakwaski, Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers, Applied Physics A: Materials Science and Processing 61(2), 123-127, 1995
     10.1007/BF01538377 
  • R. Sarzała, W. Nakwaski, M. Osiński, <title>Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers</title>, SPIE Proceedings, 1995
     10.1117/12.212532 
  • M. Osiński, W. Nakwaski, Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays, IEEE J. Sel. Topics in Quantum Electron. 1(2), 681-696, 1995
     10.1109/2944.401258 
  • W. Nakwaski, M. Osiński, Thermal Cross-Talk Effects in Closely Packed Two-Dimensional Arrays of Vertical-Cavity Surface-Emitting Lasers, Conference on Lasers and Electro-Optics, CLEO'95, str. 15 - 186-187, Maj 1995
  • W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds, Physica B: Condensed Matter 210(1), 1-25, 1995
     10.1016/0921-4526(94)00921-H 
  • R. Sarzała, W. Nakwaski, M. Osiński, Effects of Carrier Diffusion on Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers (invited Paper), Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 583-604, 1995
  • M. Osiński, W. Nakwaski, Optimization of 1.3-μm Etched-Well Surface-Emitting Laser Design, Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 372-383, 1995
  • W. Nakwaski, Effective Masses of Electrons and Heavy Holes in GaAs, InAs, AlAs and Their Ternary Compounds, Physica B 210, 1-25, 1995
  • W. Nakwaski, Current Spreading and Series Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Appl. Phys. A: Mat. Sci. \& Process. 61, 123-127, 1995
  • W. Nakwaski, R. Sarzała, M. Osiński, Computer Simulation of Vertical-Cavity Surface-Emitting Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 15, 145-158, 1995
  • W. Nakwaski, M. Osiński, Current-Spreading in Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 119-127, 1995
  • W. Nakwaski, M. Osiński, Series Electrical Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 129-137, 1995
  • R. Sarzała, Finite-Element Thermal Model for Monolithic Linear Arrays of GaAs-AlGaAs Strip-Buried-Heterostructure Diode Lasers, Electron Technology 28, 293-299, 1995
  • P. Varangis, M. Osiński, W. Nakwaski, Current Uniformity and Series Resistance in Proton-Implanted Top-Surface-Emitting Lasers with Highly-Doped Spreading Layers, Optical Society of America Annual Meeting, 10th Interdisciplinary Laser Science Conference, ILS-X, Październik 1994
  • M. Osiński, A. Leal, W. Nakwaski, Multilayer Analysis of Heat-Flux Spreading in Vertical-Cavity Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Optical Society of America Annual Meeting, 10th Interdisciplinary Laser Science Conference, ILS-X, Październik 1994
  • M. Osiński, A. Leal, W. Nakwaski, Heat-Flux Spreading in Vertical-Cavity Surface-Emitting Lasers Mounted Substrate-Down, IEEE Laser and Electro-Optics Society Annual Meeting, LEOS'94, str. 1 - 288-289, Październik 1994
  • M. Osiński, W. Nakwaski, A. Leal, Approximate Thermal Analysis of Vertical-Cavity Surface-Emitting Lasers Mounted Substrate-Down, XI Semiconductor Laser Symposium, Marzec 1994
  • R. Sarzała, W. Nakwaski, Finite-element thermal model for buried-heterostructure diode lasers, Opt. Quant. Electron. 26(2), 87-95, 1994
     10.1007/BF00558144 
  • W. Nakwaski, M. Osiński, Self-Consistent Thermal-Electrical Modeling of Proton-Implanted Top-Surface-Emitting Semiconductor Lasers (invited Paper), Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 365-387, 1994
  • M. Osiński, W. Nakwaski, P. Varangis, Analysis of Current Spreading and Series Resistance in GaAs/AlGaAs Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 388-396, 1994
  • M. Osiński, W. Nakwaski, A. Leal, Effective Thermal Conductivity Analysis of Vertical-Cavity Top-Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Proc. SPIE 2147 (Vertical-Cavity Surface-Emitting Arrays), 85-96, 1994
  • W. Nakwaski, M. Osiński, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors, IEEE J. Quantum. Electron. 29(6), 1981-1995, 1993
     10.1109/3.234461 
  • M. Osiński, W. Nakwaski, Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasers, str. 1015-1016, Maj 1993
     10.1049/el:19930677 
  • M. Osiński, W. Nakwaski, J. Cheng, Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers, SPIE Proceedings, 08-09 Wrz 1992
     10.1117/12.141102 
  • W. Nakwaski, M. Osiński, Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers, SPIE Proceedings, 08-09 Wrz 1992
     10.1117/12.141100 
  • W. Nakwaski, Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding, Integrated Optoelectronics for Communication and Processing, Boston, United States, 01-07 Wrz 1991
     10.1117/12.2321814 
  • W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992
     10.1063/1.107974 
  • W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, str. K47-K49, Lipiec 1992
     10.1002/pssa.2211320136 
  • M. Osiński, W. Nakwaski, Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays, Laser Diode Technology and Applications IV, 20-22 Sty 1992
     10.1117/12.59124 
  • R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, str. 1447-1462, Czerwiec 1992
     10.1007/BF01975077 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 491-500, 1992
     10.1002/pssa.2211290219 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 501-508, 1992
     10.1002/pssa.2211290220 
  • W. Nakwaski, M. Osiński, Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays, str. 572, 1992
     10.1049/el:19920361 
  • W. Nakwaski, M. Osiński, Thermal analysis of etched-well surface-emitting diode lasers, Microw. Opt. Techn. Let. 4(12), 541-543, 1991
     10.1002/mop.4650041209 
  • W. Nakwaski, M. Osiński, Heat-source distribution in etched-well surface-emitting semiconductor lasers, IEEE Photon. Technol. Lett. 3(11), 979-981, 1991
     10.1109/68.97833 
  • A. Brozi, Method of determining the rotation boundary values in two-dimensional gas flow, Physica Status Solidi (A) Applications and Materials 127(1), K15-K18, 1991
     10.1002/pssa.2211270136 
  • W. Nakwaski, M. Osiński, Thermal properties of etched-well surface-emitting semiconductor lasers, IEEE J. Quantum. Electron. 27(6), 1391-1401, 1991
     10.1109/3.89956 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, Opt. Quant. Electron. 23(3), 427-432, 1991
     10.1007/BF00619615 
  • W. Nakwaski, Note to reply of R.F. Ormondroyd, J. Lumin. 46(6), 423, 1990
     10.1016/0022-2313(90)90070-R 
  • W. Nakwaski, Comment on “The dynamic temperature distributions in stripe geometry lasers”, J. Lumin. 46(6), 419-420, 1990
     10.1016/0022-2313(90)90068-M 
  • A. Korzeniowski, W. Nakwaski, Thermal optimization of a construction of a double-heterostructure GaAs/(AlGa)As diode laser, str. 1039-1047, Maj 1990
     10.1007/BF01904640 
  • R. Sarzała, W. Nakwaski, An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers, str. 1171-1189, Maj 1990
     10.1007/BF01904651 
  • W. Nakwaski, Three‐dimensional analysis of a heat‐spreading phenomenon in phase‐locked arrays of oxide‐isolated diode lasers, J. Appl. Phys. 67(6), 2711-2715, 1990
     10.1063/1.345459 
  • W. Nakwaski, Thermal model of the catastrophic degradation of high‐power stripe‐geometry GaAs/(AlGa)As double‐heterostructure diode lasers, J. Appl. Phys. 67(4), 1659-1668, 1990
     10.1063/1.345633 
  • S. Pufal, W. Nakwaski, The Monte-Carlo Simulation Of The Surface Light Emitting Diode (LED) Operation., SPIE Proceedings, 1990
     10.1117/12.952971 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, str. 109-114, Styczeń 1990
     10.1007/BF01912073 
  • W. Nakwaski, Is The Thermal Time "Constant" Of A Diode Laser Really Constant?, SPIE Proceedings, 1990
     10.1117/12.952970 
  • W. Nakwaski, Correspondence: Considerations on geometry design of surface-emitting laser diodes, str. 129, 1990
     10.1049/ip-j.1990.0023 
  • A. Brozi, A New Computer Model of the MOCVD Process, Physica Status Solidi (A) Applications and Materials 114(2), K167-K169, 1989
     10.1002/pssa.2211140250 
  • W. Nakwaski, Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers, Opt. Quant. Electron. 21(4), 331-334, 1989
     10.1007/BF02027303 
  • W. Nakwaski, Thermal conductivity of binary, ternary, and quaternary III‐V compounds, J. Appl. Phys. 64(1), 159-166, 1988
     10.1063/1.341449 
  • S. Pufal, W. Nakwaski, The Monte-Carlo model of a light-emitting diode, Opt. Quant. Electron. 19(5), 289-292, 1987
     10.1007/BF02032686 
  • W. Nakwaski, Thermal properties of buried-heterostructure laser diodes, str. 87, 1987
     10.1049/ip-j.1987.0015 
  • W. Nakwaski, Reply: Thermal model of laser diode arrays, str. 458, 1987
     10.1049/el:19870330 
  • W. Nakwaski, Thermal Model Of The Double-Heterostructure Burrus-Type Light-Emitting Diode, SPIE Proceedings, 1986
     10.1117/12.938964 
  • W. Nakwaski, Thermal Model Of The Homojunction Burrus-Type Light-Emitting Diode, SPIE Proceedings, 1986
     10.1117/12.938963 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part I—The model, IEEE T. Electron. Dev. 33(7), 889-899, 1986
     10.1109/T-ED.1986.22591 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part II—The results, IEEE T. Electron. Dev. 33(7), 900-907, 1986
     10.1109/T-ED.1986.22592 
  • W. Nakwaski, Thermal model of laser diode arrays, str. 1169, 1986
     10.1049/el:19860800 
  • W. Nakwaski, A. M. Kontkiewicz, Thermal resistance of light-emitting diodes, IEEE T. Electron. Dev. 32(11), 2282-2291, 1985
     10.1109/T-ED.1985.22271 
  • W. Nakwaski, Thermal analysis of the catastrophic mirror damage in laser diodes, J. Appl. Phys. 57(7), 2424-2430, 1985
     10.1063/1.334350 
  • W. Nakwaski, Simple formulae giving the temperature profiles in the stripe-geometry laser diodes with oxide barriers, Opt. Quant. Electron. 16(5), 439-443, 1984
     10.1007/BF00619636 
  • W. Nakwaski, Spreading thermal resistance of the heat-sink of a light-emitting diode, Solid-State Electron. 27(8-9), 823-824, 1984
     10.1016/0038-1101(84)90034-0 
  • W. Nakwaski, Simplified thermal analysis of a laser diode array, str. 266-267, Luty 1984
     10.1070/QE1984v014n02ABEH004865 
  • W. Nakwaski, Dynamical thermal properties of stripe-geometry laser diodes, str. 94, 1984
     10.1049/ip-i-1.1984.0026 
  • W. Nakwaski, A. M. Kontkiewicz, Temperature distribution in a light-emitting diode during a pulse operation, str. 984, 1984
     10.1049/el:19840670 
  • W. Nakwaski, Static thermal properties of broad-contact double-heterostructure laser diodes, Opt. Quant. Electron. 15(6), 513-527, 1983
     10.1007/BF00620020 
  • W. Nakwaski, Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes, Opt. Quant. Electron. 15(4), 313-324, 1983
     10.1007/BF00619901 
  • W. Nakwaski, Simple formulas giving temperature profiles in active layer of stripe-geometry laser diode without oxide barriers, str. 368, 1983
     10.1049/el:19830255 
  • W. Nakwaski, Threshold current of oxide-insulated stripe laser diodes, str. 348-350, Marzec 1982
     10.1070/qe1982v012n03abeh012183 
  • W. Nakwaski, The thermal properties of a single-heterostructure laser diode supplied with short current pulses, Opt. Quant. Electron. 11(4), 319-327, 1979
     10.1007/BF00619365