Wyczyść filtry
  • S. P. Łepkowski, W. Nakwaski, M. Bugajski, Equivalent Electrical Parameters of Semiconductor Bragg Mirrors and Their Application in Modelling of Vertical-Cavity Surface-Emitting Lasers, IEEE J. Quantum. Electron. submitted, 2003
  • M. Szymański, B. Mroziewicz, W. Nakwaski, Threshold Analysis of Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • W. Nakwaski, M. Osiński, Study of a Room-Temperature Operation of 1.3-μm Etched-Well Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. submitted, 2003
  • W. Nakwaski, M. Szymański, B. Mroziewicz, Cylindrical Electromagnetic Waves in Circular-Grating Semiconductor Lasers, Electron Technology submitted, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Design Guidelines for Fundamental-Mode-Operated Cascade Nitride VCSELs, IEEE Photon. Technol. Lett. 15, 495-497, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Structure Optimization of 1.3-μm (GaIn)(NAs)/GaAs in-Plane Lasers, IEEE Proc. Optoelectr. 150, 56-58, 2003
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Performance Characteristics of GaInNAs Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 150, 83-85, 2003
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output Power Saturation in InAs/GaAs Quantum Dot Lasers, Phys. Stat. Sol., 1351-1354, 2003
  • P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Nitride VCSEL Design for Continuous-Wave Operation of Higher-Order Optical Modes, Appl. Phys. A: Mat. Sci. \& Process. 77, 761-768, 2003
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher‐Order Transverse Modes in Possible Nitride VCSELs, Physica Status Solidi C - Conferences, 48-51, 2002
     10.1002/pssc.200390095 
  • W. Nakwaski, R. Sarzała, M. Wasiak, T. Czyszanowski, P. Maćkowiak, Single-Photon Devices, International Conference on Solid State Crystals: Materials Science, Application, ICSSC, str. 178, Październik 2002
  • M. Wasiak, P. Maćkowiak, R. Sarzała, T. Czyszanowski, W. Nakwaski, Broadening Mechanisms Influencing Gain Spectra of 1.3-μm Quantum-Dot (InGa)As/GaAs Lasers, International Conference on Solid State Crystals: Materials Science, Application, ICSSC, str. 180, Październik 2002
  • P. Maćkowiak, T. Czyszanowski, R. Sarzała, M. Wasiak, W. Nakwaski, An Optimal Design of Possible Structures of Nitride VCSELs, International Conference on Solid State Crystals: Materials Science, Application, ICSSC, str. 62, Październik 2002
  • R. Sarzała, P. Maćkowiak, M. Wasiak, T. Czyszanowski, W. Nakwaski, Simulation of Performance Characteristics of GaInNAs VCSEL Lasers, Conference on Physics, Technology of Dilute Nitrides for Optical Communications, Wrzesień 2002
  • M. Wasiak, M. Bugajski, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, Output Power Saturation in InGaN/GaAs Quantum Dot Lasers, 2nd International Conference on Semiconductor Quantum Dots (QD2002), Wrzesień 2002
  • R. Sarzała, Komputerowe Projektowanie i Modelowanie Laserow Polprzewodnikowych Na Tle Dynamicznego Rozwoju Nowych Materialow, Konstrukcji i Technologii (referat Zaproszony), VIII Seminarium "Powierzchnia i Struktury Cienkowarstwowe", Maj 2002
  • M. Wasiak, R. Sarzała, T. Czyszanowski, P. Maćkowiak, W. Nakwaski, M. Bugajski, (InGa)As/GaAs Quantum-Dot Diode Lasers for 1.3-?m Optical Fibre Communication, 4th International Conference on Transparent Optical Networks: ICTON 2002, str. 1 - 144-147, Kwiecień 2002
  • R. P. S. a, P. Maćkowiak, W. Nakwaski, Temperature-enhanced radial current spreading in possible VCSEL structures of nitride lasers, Semicond. Sci. Technol. 17(3), 255-260, 2002
     10.1088/0268-1242/17/3/313 
  • T. Szoplik, W. Urbańczyk, W. Nakwaski, B. Mroziewicz, T. Woliński, H. Malak, Rozmowa o Fotonice, Postępy Fiz. 53, 149-155, 2002
  • R. Sarzała, P. Maćkowiak, W. Nakwaski, Temperature-Enhanced Radial Current Spreading in Possible VCSEL Structures of Nitride Lasers, Semicond. Sci. Technol. 17, 255-260, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. I. Analytical Thermal Model, Opt. Appl. 32, 157-172, 2002
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Simulation of Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers. II. Results and Discussion, Opt. Appl. 32, 173-185, 2002
  • P. Maćkowiak, M. Wasiak, T. Czyszanowski, R. Sarzała, W. Nakwaski, Designing Guidelines for Nitride VCSELs Resonator, Opt. Appl. 32, 493-502, 2002
  • M. Wasiak, M. Bugajski, E. Machowska-Podsiadło, T. J. Ochalski, J. Kątcki, R. Sarzała, P. Maćkowiak, T. Czyszanowski, W. Nakwaski, J. . Chen, U. Oesterle, A. Fiore, M. Ilegems, Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots, Opt. Appl. 32, 291-299, 2002
  • W. Nakwaski, P. Maćkowiak, M. Wasiak, R. Sarzała, T. Czyszanowski, Higher-Order Transverse Modes in Possible Nitride VCSELs, Phys. Stat. Sol., 48-51, 2002
  • T. Czyszanowski, M. Wasiak, P. Maćkowiak, R. Sarzała, W. Nakwaski, Method of Lines - the New Vectorial Approach To Optical Phenomena in Diode Lasers, Opt. Appl. 32, 477-484, 2002
  • R. Sarzała, Computer Simulation of Performance Characteristics of (GaIn)(NAs) Diode Lasers, Opt. Appl. 32, 449-460, 2002
  • R. Sarzała, M. Wasiak, T. Czyszanowski, M. Bugajski, W. Nakwaski, Analysis of Lasing Thresholds of 1.3-μm Oxide-Confined in-Plane Quantum-Dot (InGa)(As/GaAs Lasers, European Workshop on Gallium Arsenide-Based Lasers at 1300 nm, Wrzesień 2001
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
     10.1016/S0010-4655(01)00238-7 
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures, IEEE Photon. Technol. Lett. 13(7), 687-689, 2001
     10.1109/68.930415 
  • T. Czyszanowski, W. Nakwaski, How many quantum wells in nitride lasers?, J. Phys. D: Appl. Phys. 34(15), 2346-2352, 2001
     10.1088/0022-3727/34/15/314 
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A novel diagonal-current injection VCSEL design proposed for nitride lasers, Semicond. Sci. Technol. 16(7), 598-602, 2001
     10.1088/0268-1242/16/7/313 
  • R. Sarzała, P. Maćkowiak, W. Nakwaski, Designing of Current Spreading in Possible Continuous-Wave-Operating Nitride VCSELs, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", str. 65-66, Czerwiec 2001
  • P. Maćkowiak, W. Nakwaski, An Impact of a Barrier Width Between Active-Region Quantum Wells on Thresholds of Nitride VCSELs, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", Czerwiec 2001
  • T. Czyszanowski, W. Nakwaski, Designing of Multiple-Quantum-Well Active Regions in Nitride Diode Lasers, International Conference, Annual Meeting of European Optical Society "From Quantum Optics to Photonics", str. 67-68, Czerwiec 2001
  • T. Czyszanowski, W. Nakwaski, Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, J. Phys. D: Appl. Phys. 34(9), 1277-1285, 2001
     10.1088/0022-3727/34/9/301 
  • P. Maćkowiak, W. Nakwaski, Some aspects of designing an efficient nitride VCSEL resonator, J. Phys. D: Appl. Phys. 34(6), 954-958, 2001
     10.1088/0022-3727/34/6/317 
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 1. The Model, Opt. Appl. 31, 313-323, 2001
  • W. Nakwaski, P. Maćkowiak, Crucial Structure Elements of Possible Nitride Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 337-349, 2001
  • W. Nakwaski, P. Maćkowiak, M. Osiński, Modeling of Radial Steam Oxidation of AlAs Layers in Cylindrically Symmetric Mesa Structures of Vertical-Cavity Surface-Emitting Lasers, Opt. Appl. 31, 289-299, 2001
  • T. Czyszanowski, M. Wasiak, W. Nakwaski, Design Considerations for GaAs/(AlGa)As SCH and GRIN-SCH Quantum-Well Laser Structures. 2. The Results, Opt. Appl. 31, 325-336, 2001
  • P. Maćkowiak, W. Nakwaski, Some Aspects of Designing Efficient Nitride VCSEL Resonator, J. Phys. D: Appl. Phys. 34, 954-958, 2001
  • T. Czyszanowski, W. Nakwaski, Mode Transformation Enhanced in Nitride Diode Lasers by Buffer Layers Modifications, J. Phys. D: Appl. Phys. 34, 1277-1285, 2001
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, A Novel Diagonal-Current-Injection VCSEL Design Proposed for Nitride Lasers, Semicond. Sci. Technol. 16, 598-602, 2001
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photon. Technol. Lett. 13, 687-689, 2001
  • T. Czyszanowski, W. Nakwaski, How Many Quantum Wells in Nitride Lasers ?, J. Phys. D: Appl. Phys. 34, 2346-2352, 2001
  • T. Czyszanowski, W. Nakwaski, Design Considerations for InGaN/GaN/AlGaN Quantum Well Lasers, Opto-Electron. Rev. 9, 367-376, 2001
  • W. Nakwaski, Optical Fields in Complex Multilayered Structures of Modern Semiconductor Optoelectronic Devices, Opto-Electron. Rev. 9, 269-273, 2001
  • T. Czyszanowski, Operation of Arsenide Diode Lasers at Elevated Temperatures, Opt. Appl. 31, 301-311, 2001
  • T. Czyszanowski, Method of Effective Index and Method of Lines for the Analysis of Optical Phenomena in the Edge Emitting (in-Plane) Diode Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 21, 31-38, 2001
  • M. Rak, M. Izdebski, A. Brozi, Kinetic Monte Carlo study of crystal growth from solution, Comput. Phys. Commun. 138(3), 250-263, 2001
  • W. Nakwaski, Modeling of Optical Fields in Complex Multilayered Semiconductor Structures with a Vertical-Cavity Surface-Emitting Laser (VCSEL) As An Example, Polish Academy of Sciences, 14th School on Optoelectronics: "Photonics in Information Processing", str. 113-121, Listopad 2000
  • A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, M. Wasiak, W. Nakwaski, Simulation of Semiconductor Lasers for Optimization of Their Structures for Various Wavelengths of the Output Radiation, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar THERMIC'2000, str. 40-46, Październik 2000
  • T. Czyszanowski, Possible Optimization of Arsenide Diode Lasers for Their Operation at Elevated Temperatures, Workshop "Microtechnology, Thermal Problems in Electronics", The International Seminar, THERMIC 2000, str. 27-33, Październik 2000
  • P. Maćkowiak, R. Sarzała, W. Nakwaski, Novel Design Proposed for Nitride VCSELs, International Workshop on Nitride Semiconductors, IWN2000, str. 889-891, Wrzesień 2000
  • W. Nakwaski, P. Maćkowiak, Features of Possible Nitride Vertical-Cavity Surface-Emitting Lasers (VCSELs) for a Room-Temperature Continuous-Wave Operation, Workshop "Microtechnology, Thermal Problems in Electronics", The Summer School, Wrzesień 2000
  • P. Maćkowiak, W. Nakwaski, Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers, J. Phys. D: Appl. Phys. 33(6), 642-653, 2000
     10.1088/0022-3727/33/6/309 
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. I. Fundamental Principles (invited Paper), Opto-Electron. Rev. 8, 11 -18., 2000
  • W. Nakwaski, Simulation of Optical Phenomena in Vertical-Cavity Surface-Emitting Lasers. II. Models (invited Paper), Opto-Electron. Rev. 8, 19-28, 2000
  • P. Maćkowiak, W. Nakwaski, An Impact of Mismatch-Related Phenomena on a Room-Temperature Operation of Nitride VCSELs, Opt. Appl. 30, 125-140, 2000
  • P. Maćkowiak, W. Nakwaski, Designing Guidelines for Possible Continuous-Wave-Operating Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 33, 642-653, 2000
  • W. Nakwaski, P. Maćkowiak, Nitride VCSELs: Close Future Or Distant Prospects ?, Proc. SPIE 4237 (Laser Technology VI: Progress in Lasers), 97-108, 2000
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Simple Theory of Steam Oxidation of AlAs, Proc. SPIE 3896 (SPIE International Symposium on Photonics and Applications, ISPA'99, Singapore 30Nov-3Dec 1999), 534-546, 2000
  • M. Osiński, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Maćkowiak, W. Nakwaski, Simple theory of steam oxidation of AlAs, SPIE Proceedings, 30 Lis-03 Gru 1999
     10.1117/12.370359 
  • E. C. Yu, M. Z. Pindera, A. J. Przekwas, G. A. Smolyakov, W. Nakwaski, M. Osiński, Multidisciplinary design tools for VCSEL devices and compact electronic packages, Physics and Simulation of Optoelectronic Devices VII, 25-29 Sty 1999
     10.1117/12.356897 
  • G. A. Smolyakov, V. A. Smagley, W. Nakwaski, P. G. Eliseev, M. Osiński, Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method, Physics and Simulation of Optoelectronic Devices VII, 25-29 Sty 1999
     10.1117/12.356891 
  • P. Maćkowiak, W. Nakwaski, Optimal Configurations of Active Regions in Nitride VCSELs, International Conference on Transparent Optical Networks, ICTON'99, Czerwiec 1999
  • P. Maćkowiak, W. Nakwaski, [], Opt. Quant. Electron. 31(11), 1179-1188, 1999
     10.1023/A:1007011009768 
  • G. A. Smolyakov, V. A. Smaglev, W. Nakwaski, P. G. Eliseev, M. Osiński, Design of InGaN/GaN/AlGaN VCSELs Using the Effective Frequency Method, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices VII), 324-335., 1999
  • E. C. Yu, H. M. Pindera, A. J. Przekwas, G. A. Smolyakov, W. Nakwaski, M. Osiński, Multi-Disciplinary Design Tools for VCSEL Devices and Compact Electronic Packages, Proc. SPIE 3625 (Physics and Simulation of Optoelectronic Devices), 383-394, 1999
  • M. Turowski, E. C. Yu, A. J. Przekwas, W. Nakwaski, M. Osiński, 3-D Simulation of Thermal Phenomena in Arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs), Electron Technology 32, 220-226, 1999
  • P. Maćkowiak, W. Nakwaski, On a Possible Room-Temperature Operation of Nitride VCSELs, Scientific Bulletin of Tech. Univ. of Łódź, Physics 19, 39-49, 1999
  • W. Nakwaski, P. Maćkowiak, Thermal Aspects of Semiconductor Lasers Designing (invited Paper), Workshop Microtechnology, Thermal Problems in Electronics, MICROTHERM'98, Summer School on Microtechnologies, str. 29-39, Wrzesień 1998
  • A. Brozi, P. Maćkowiak, R. Sarzała, K. Łazarow, W. Nakwaski, Semiconductor Lasers Properties Investigations by Computer Simulations, Workshop Microtechnology, Thermal Problems in Electronics, MICROTHERM'98, The Seminar Thermic'98, Wrzesień 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal crosstalk in arrays of proton-implanted top-surface-emitting lasers, Physics and Simulation of Optoelectronic Devices VI, United States, 26 Sty 1998
     10.1117/12.316672 
  • M. Turowski, E. C. Yu, A. J. Przekwas, W. Nakwaski, M. Osiński, 3D Simulation of Thermal Phenomena in Arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs), 5th International Conference on Mixed Design of Integrated Circuits, Systems, MIXDES'98, str. 177-182, Czerwiec 1998
  • P. Maćkowiak, W. Nakwaski, Threshold Currents of Nitride VCSELs with Various Active Regions, Third European GaN Workshop, Czerwiec 1998
  • W. Nakwaski, R. Sarzała, Transverse modes in gain-guided vertical-cavity surface-emitting lasers, Opt. Commun. 148(1-3), 63-69, 1998
     10.1016/S0030-4018(97)00616-0 
  • W. Nakwaski, R. Sarzała, High-order transverse modes in vertical-cavity surface-emitting lasers, Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics, Poland, 16-20 Wrz 1996
     10.1117/12.301360 
  • W. Nakwaski, M. Osiński, III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progress in Optics, Elsevier, str. 165-262, 1998
     10.1016/S0079-6638(08)70351-2 
  • W. Nakwaski, R. Sarzała, Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Opt. Commun. 148, 63 - 69, 1998
  • W. Nakwaski, M. Osiński, Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers, Progr. Opt. XXXVIII, 165-262, 1998
  • E. C. Yu, M. Osiński, W. Nakwaski, M. Turowski, A. J. Przekwas, Thermal Crosstalk in Arrays of Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 3283 (Physics and Simulation of Optoelectronic Devices VI), 384-395, 1998
  • W. Nakwaski, Analiza Trendów Rozwojowych Azotkowych Laserów Złączowych Oraz Możliwości Ich Wytwarzania Na Podłożu GaN, Elektronika 39, 07-10, 1998
  • J. Wilk, R. Sarzała, W. Nakwaski, The Spatial Hole Burning Effect in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, L11-L15,, 1998
  • P. Maćkowiak, W. Nakwaski, Detailed Threshold Analysis of UV-Emitting Nitride Vertical-Cavity Surface-Emitting Lasers, J. Phys. D: Appl. Phys. 31, 2479-2484, 1998
  • W. Nakwaski, Some Unsolved Problems Associated with Designing of Nitride Lasers (invited Paper), Opto-Electron. Rev. 6, 93-110, 1998
  • W. Nakwaski, A. Brozi, K. Łazarow, P. Maćkowiak, R. Sarzała, Computer Simulations of Operations of Various Designs of Semiconductor Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 18, 51-58, 1998
  • P. Maćkowiak, W. Nakwaski, Prospects for Nitride Vertical-Cavity Surface­-Emitting Lasers, Proc. SPIE 3490 (Optics in Computing, OC'98, Brugge (Belgium) 17­20 June, 1998), 331-334, 1998
  • R. Sarzała, W. Nakwaski, Carrier diffusion inside active regions of gain-guided vertical-cavity surface-emitting lasers, IEE P. - Optoelectron. 144(6), 421-425, 1997
     10.1049/ip-opt:19971300 
  • W. Nakwaski, R. Sarzała, Analysis of Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Lasers, Electro-Optics Society 1997 Annual Meeting, LEOS'97, str. 2 - 293-294, Listopad 1997
  • W. Nakwaski, <title>Self-consistent analytical models of semiconductor vertical-cavity surface-emitting lasers</title>, SPIE Proceedings, Poland, 23 Wrz 1996
     10.1117/12.280513 
  • M. Izdebski, M. Rak, A. Brozi, <title>Monte Carlo model of crystal growth with solvation</title>, SPIE Proceedings, Poland, 07 Paź 1996
     10.1117/12.280718 
  • W. Nakwaski, R. Sarzała, Analysis of transverse modes in gain-guided vertical-cavity surface-emitting lasers, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 10-13 Lis 1997
     10.1109/leos.1997.645429 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(9), 883-892, 1997
     10.1023/A:1018525616214 
  • W. Nakwaski, M. OSIN´SKI, [], Opt. Quant. Electron. 29(6), 639-649, 1997
     10.1023/A:1018536423966 
  • W. Nakwaski, W. L. Johnson, M. Osiński, Methodology of Parallelization Used in Simulation of Thermal Behaviour of Large Two-Dimensional Arrays of Semiconductor Lasers, Electron Technology 30, 287-297, 1997
  • W. Nakwaski, R. Sarzała, Verification of Usability of Simple Discrimination Mechanisms for Higher-Order Transverse Modes in Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 298-305, 1997
  • P. Maćkowiak, W. Nakwaski, Threshold Evaluation of GaN/AlGaN/AlN Vertical-Cavity Surface-Emitting Lasers, Electron Technology 30, 314-323, 1997
  • J. Wilk, R. Sarzała, W. Nakwaski, DBR Mirror Properties in Real Operating Conditions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, Int. J. Optoelectr. 11, 333-337, 1997
  • R. Sarzała, W. Nakwaski, Carrier Diffusion Inside Active-Regions of Gain-Guided Vertical-Cavity Surface-Emitting Lasers, IEEE Proc. Optoelectr. 144, 421-425, 1997
  • W. Nakwaski, Self-Consistent Analytical Models of Semiconductor Vertical-Cavity Surface-Emitting Lasers (invited Paper), Proc. SPIE 3186 (Laser Technology V: Physics and Research and Development Trends), 324-338, 1997
  • W. Nakwaski, R. Sarzała, Higher-Order Transverse Modes in Vertical-Cavity Surface-Emitting Lasers, Proc. SPIE 3320 (Wave and Quantum Aspects of Contemporary Optics), 78-96, 1997
  • W. L. Johnson, M. Osiński, W. Nakwaski, Parallelization Strategy in Modeling of Two-Dimensional Arrays of Semiconductor Lasers on An IBM SP2 Supercomputer, High Performance Computing in Europe on IBM Platforms, SUP'EUR '96 Conference, str. 215-220, Wrzesień 1996
  • W. Nakwaski, Samouzgodnione Modele Analityczne Laserów o Emisji Powierzchniowej (typu VCSEL), V Sympozjum Techniki Laserowej, str. 402-413, Wrzesień 1996
  • W. Nakwaski, M. Osiński, Optimization of 1.3-μm InGaAsP/InP Vertical-Cavity Surface-Emitting Diode Lasers, 5th-Polish-Lithuanian Workshop on the Semiconductor Physics and Technology, str. 37808, Czerwiec 1996
  • R. Sarzała, W. Nakwaski, M. Osiński, An Impact of Radial Carrier Diffusion Within the Active Region of the Semiconductor Surface-Emitting Laser on Heat Generation and Sinking Processes During Its Continuous Wave Operation, 5th-Polish-Lithuanian Workshop on the Semiconductor Physics and Technology, str. 37872, Czerwiec 1996
  • W. Nakwaski, Macierze Laserów o Emisji Powierzchniowej, XI Szkoła Optoelektroniki: Fotonika w Przetwarzaniu Informacji, str. 143-158, Maj 1996
  • W. Nakwaski, Symulacje Komputerowe Laserów Złączowych Realizowane w Zespole Fizyki Komputerowej Instytutu Fizyki Politechniki Łódzkiej, I Seminarium "Zagadnienia Termiczne w Elektronice", TERMIK'96, str. 123-128, Maj 1996
  • W. Nakwaski, Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers, Opt. Quant. Electron. 28(4), 335-352, 1996
     10.1007/BF00287023 
  • W. Nakwaski, Reply To 'Comment on Three-Dimensional Analysis of a Heat-Spreading Phenomenon in Phase-Locked Arrays of Oxide-Isolated Diode Lasers', J. Appl. Phys. 79, 9403, 1996
  • W. Nakwaski, M. Osiński, Thermally Conductive Dielectric Mirrors As a Possible Solution Enabling Continuous Wave Operation of 1.3-μm Vertical-Cavity Surface-Emitting Lasers at Room Temperature, Electron Technology 29, 79-82, 1996
  • R. Sarzała, W. Nakwaski, M. Osiński, Carrier Diffusion in the Active Region of Vertical-Cavity Surface-Emitting Lasers and Its Influence on Their Operation, Electron Technology 29, 83-87, 1996
  • M. Osiński, W. Nakwaski, Thermal Analysis of 1.3-μm Etched-Well Surface-Emitting Lasers with Dielectric Mirrors, 8th Lasers and Electro-Optics Society Annual Meeting, LEOS'95, Październik 1995
  • R. Sarzała, W. Nakwaski, M. Osiński, Finite-Element Comprehensive Thermal Modeling of Proton-Implanted Top-Surface-Emitting Lasers, 8th Lasers and Electro-Optics Society Annual Meeting, LEOS'95, Październik 1995
  • W. Nakwaski, Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers, Applied Physics A: Materials Science and Processing 61(2), 123-127, 1995
     10.1007/BF01538377 
  • R. Sarzała, W. Nakwaski, M. Osiński, <title>Effects of carrier diffusion on thermal properties of proton-implanted top-surface-emitting lasers</title>, SPIE Proceedings, 1995
     10.1117/12.212532 
  • M. Osiński, W. Nakwaski, Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays, IEEE J. Sel. Topics in Quantum Electron. 1(2), 681-696, 1995
     10.1109/2944.401258 
  • W. Nakwaski, M. Osiński, Thermal Cross-Talk Effects in Closely Packed Two-Dimensional Arrays of Vertical-Cavity Surface-Emitting Lasers, Conference on Lasers and Electro-Optics, CLEO'95, str. 15 - 186-187, Maj 1995
  • W. Nakwaski, Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds, Physica B: Condensed Matter 210(1), 1-25, 1995
     10.1016/0921-4526(94)00921-H 
  • R. Sarzała, W. Nakwaski, M. Osiński, Effects of Carrier Diffusion on Thermal Properties of Proton-Implanted Top-Surface-Emitting Lasers (invited Paper), Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 583-604, 1995
  • M. Osiński, W. Nakwaski, Optimization of 1.3-μm Etched-Well Surface-Emitting Laser Design, Proc. SPIE 2399 (Physics and Simulation of Optoelectronic Devices III), 372-383, 1995
  • W. Nakwaski, Effective Masses of Electrons and Heavy Holes in GaAs, InAs, AlAs and Their Ternary Compounds, Physica B 210, 1-25, 1995
  • W. Nakwaski, Current Spreading and Series Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Appl. Phys. A: Mat. Sci. \& Process. 61, 123-127, 1995
  • W. Nakwaski, R. Sarzała, M. Osiński, Computer Simulation of Vertical-Cavity Surface-Emitting Lasers, Scientific Bulletin of Tech. Univ. of Łódź, Physics 15, 145-158, 1995
  • W. Nakwaski, M. Osiński, Current-Spreading in Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 119-127, 1995
  • W. Nakwaski, M. Osiński, Series Electrical Resistance of Proton-Implanted Vertical-Cavity Top-Surface-Emitting Lasers, Int. J. Optoelectr. 10, 129-137, 1995
  • R. Sarzała, Finite-Element Thermal Model for Monolithic Linear Arrays of GaAs-AlGaAs Strip-Buried-Heterostructure Diode Lasers, Electron Technology 28, 293-299, 1995
  • P. Varangis, M. Osiński, W. Nakwaski, Current Uniformity and Series Resistance in Proton-Implanted Top-Surface-Emitting Lasers with Highly-Doped Spreading Layers, Optical Society of America Annual Meeting, 10th Interdisciplinary Laser Science Conference, ILS-X, Październik 1994
  • M. Osiński, A. Leal, W. Nakwaski, Multilayer Analysis of Heat-Flux Spreading in Vertical-Cavity Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Optical Society of America Annual Meeting, 10th Interdisciplinary Laser Science Conference, ILS-X, Październik 1994
  • M. Osiński, A. Leal, W. Nakwaski, Heat-Flux Spreading in Vertical-Cavity Surface-Emitting Lasers Mounted Substrate-Down, IEEE Laser and Electro-Optics Society Annual Meeting, LEOS'94, str. 1 - 288-289, Październik 1994
  • M. Osiński, W. Nakwaski, A. Leal, Approximate Thermal Analysis of Vertical-Cavity Surface-Emitting Lasers Mounted Substrate-Down, XI Semiconductor Laser Symposium, Marzec 1994
  • R. Sarzała, W. Nakwaski, Finite-element thermal model for buried-heterostructure diode lasers, Opt. Quant. Electron. 26(2), 87-95, 1994
     10.1007/BF00558144 
  • W. Nakwaski, M. Osiński, Self-Consistent Thermal-Electrical Modeling of Proton-Implanted Top-Surface-Emitting Semiconductor Lasers (invited Paper), Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 365-387, 1994
  • M. Osiński, W. Nakwaski, P. Varangis, Analysis of Current Spreading and Series Resistance in GaAs/AlGaAs Proton-Implanted Top-Surface-Emitting Lasers, Proc. SPIE 2146 (Physics and Simulation of Optoelectronics Devices II, OE/LASE '94), 388-396, 1994
  • M. Osiński, W. Nakwaski, A. Leal, Effective Thermal Conductivity Analysis of Vertical-Cavity Top-Surface-Emitting Lasers with Semiconducting Bragg Mirrors, Proc. SPIE 2147 (Vertical-Cavity Surface-Emitting Arrays), 85-96, 1994
  • W. Nakwaski, M. Osiński, Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors, IEEE J. Quantum. Electron. 29(6), 1981-1995, 1993
     10.1109/3.234461 
  • M. Osiński, W. Nakwaski, Effective thermal conductivity analysis of 1.55 μm InGaAsP/InP vertical-cavity top-surface-emitting microlasers, str. 1015-1016, Maj 1993
     10.1049/el:19930677 
  • M. Osiński, W. Nakwaski, J. Cheng, Effect of top-contact geometry on spreading resistance in proton-implanted vertical-cavity surface-emitting lasers, SPIE Proceedings, 08-09 Wrz 1992
     10.1117/12.141102 
  • W. Nakwaski, M. Osiński, Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers, SPIE Proceedings, 08-09 Wrz 1992
     10.1117/12.141100 
  • W. Nakwaski, Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding, Integrated Optoelectronics for Communication and Processing, Boston, United States, 01-07 Wrz 1991
     10.1117/12.2321814 
  • W. Nakwaski, M. Osiński, J. Cheng, Spreading resistance in proton‐implanted vertical‐cavity surface‐emitting diode lasers, Appl. Phys. Lett. 61(26), 3101-3103, 1992
     10.1063/1.107974 
  • W. Nakwaski, Hole Mobility in Carbon-Doped GaAs and (AlGa)As, str. K47-K49, Lipiec 1992
     10.1002/pssa.2211320136 
  • M. Osiński, W. Nakwaski, Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays, Laser Diode Technology and Applications IV, 20-22 Sty 1992
     10.1117/12.59124 
  • R. Sarzała, W. Nakwaski, Thermal analysis of oxide-isolated stripe diode lasers, str. 1447-1462, Czerwiec 1992
     10.1007/BF01975077 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Gas Flow in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 491-500, 1992
     10.1002/pssa.2211290219 
  • A. Brozi, A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor, Physica Status Solidi (A) Applications and Materials 129(2), 501-508, 1992
     10.1002/pssa.2211290220 
  • W. Nakwaski, M. Osiński, Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays, str. 572, 1992
     10.1049/el:19920361 
  • W. Nakwaski, M. Osiński, Thermal analysis of etched-well surface-emitting diode lasers, Microw. Opt. Techn. Let. 4(12), 541-543, 1991
     10.1002/mop.4650041209 
  • W. Nakwaski, M. Osiński, Heat-source distribution in etched-well surface-emitting semiconductor lasers, IEEE Photon. Technol. Lett. 3(11), 979-981, 1991
     10.1109/68.97833 
  • A. Brozi, Method of determining the rotation boundary values in two-dimensional gas flow, Physica Status Solidi (A) Applications and Materials 127(1), K15-K18, 1991
     10.1002/pssa.2211270136 
  • W. Nakwaski, M. Osiński, Thermal properties of etched-well surface-emitting semiconductor lasers, IEEE J. Quantum. Electron. 27(6), 1391-1401, 1991
     10.1109/3.89956 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, Opt. Quant. Electron. 23(3), 427-432, 1991
     10.1007/BF00619615 
  • W. Nakwaski, Note to reply of R.F. Ormondroyd, J. Lumin. 46(6), 423, 1990
     10.1016/0022-2313(90)90070-R 
  • W. Nakwaski, Comment on “The dynamic temperature distributions in stripe geometry lasers”, J. Lumin. 46(6), 419-420, 1990
     10.1016/0022-2313(90)90068-M 
  • A. Korzeniowski, W. Nakwaski, Thermal optimization of a construction of a double-heterostructure GaAs/(AlGa)As diode laser, str. 1039-1047, Maj 1990
     10.1007/BF01904640 
  • R. Sarzała, W. Nakwaski, An appreciation of usability of the finite element method for the thermal analysis of stripe-geometry diode lasers, str. 1171-1189, Maj 1990
     10.1007/BF01904651 
  • W. Nakwaski, Three‐dimensional analysis of a heat‐spreading phenomenon in phase‐locked arrays of oxide‐isolated diode lasers, J. Appl. Phys. 67(6), 2711-2715, 1990
     10.1063/1.345459 
  • W. Nakwaski, Thermal model of the catastrophic degradation of high‐power stripe‐geometry GaAs/(AlGa)As double‐heterostructure diode lasers, J. Appl. Phys. 67(4), 1659-1668, 1990
     10.1063/1.345633 
  • S. Pufal, W. Nakwaski, The Monte-Carlo Simulation Of The Surface Light Emitting Diode (LED) Operation., SPIE Proceedings, 1990
     10.1117/12.952971 
  • W. Nakwaski, Spreading thermal resistance of a diode-laser heat sink, str. 109-114, Styczeń 1990
     10.1007/BF01912073 
  • W. Nakwaski, Is The Thermal Time "Constant" Of A Diode Laser Really Constant?, SPIE Proceedings, 1990
     10.1117/12.952970 
  • W. Nakwaski, Correspondence: Considerations on geometry design of surface-emitting laser diodes, str. 129, 1990
     10.1049/ip-j.1990.0023 
  • A. Brozi, A New Computer Model of the MOCVD Process, Physica Status Solidi (A) Applications and Materials 114(2), K167-K169, 1989
     10.1002/pssa.2211140250 
  • W. Nakwaski, Three-dimensional time-dependent thermal model of catastrophic mirror damage in stripe-geometry double-heterostructure GaAs/(AlGa)As diode lasers, Opt. Quant. Electron. 21(4), 331-334, 1989
     10.1007/BF02027303 
  • W. Nakwaski, Thermal conductivity of binary, ternary, and quaternary III‐V compounds, J. Appl. Phys. 64(1), 159-166, 1988
     10.1063/1.341449 
  • S. Pufal, W. Nakwaski, The Monte-Carlo model of a light-emitting diode, Opt. Quant. Electron. 19(5), 289-292, 1987
     10.1007/BF02032686 
  • W. Nakwaski, Thermal properties of buried-heterostructure laser diodes, str. 87, 1987
     10.1049/ip-j.1987.0015 
  • W. Nakwaski, Reply: Thermal model of laser diode arrays, str. 458, 1987
     10.1049/el:19870330 
  • W. Nakwaski, Thermal Model Of The Double-Heterostructure Burrus-Type Light-Emitting Diode, SPIE Proceedings, 1986
     10.1117/12.938964 
  • W. Nakwaski, Thermal Model Of The Homojunction Burrus-Type Light-Emitting Diode, SPIE Proceedings, 1986
     10.1117/12.938963 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part I—The model, IEEE T. Electron. Dev. 33(7), 889-899, 1986
     10.1109/T-ED.1986.22591 
  • W. Nakwaski, Thermal properties of the Burrus-type light-emitting diode: Part II—The results, IEEE T. Electron. Dev. 33(7), 900-907, 1986
     10.1109/T-ED.1986.22592 
  • W. Nakwaski, Thermal model of laser diode arrays, str. 1169, 1986
     10.1049/el:19860800 
  • W. Nakwaski, A. M. Kontkiewicz, Thermal resistance of light-emitting diodes, IEEE T. Electron. Dev. 32(11), 2282-2291, 1985
     10.1109/T-ED.1985.22271 
  • W. Nakwaski, Thermal analysis of the catastrophic mirror damage in laser diodes, J. Appl. Phys. 57(7), 2424-2430, 1985
     10.1063/1.334350 
  • W. Nakwaski, Simple formulae giving the temperature profiles in the stripe-geometry laser diodes with oxide barriers, Opt. Quant. Electron. 16(5), 439-443, 1984
     10.1007/BF00619636 
  • W. Nakwaski, Spreading thermal resistance of the heat-sink of a light-emitting diode, Solid-State Electron. 27(8-9), 823-824, 1984
     10.1016/0038-1101(84)90034-0 
  • W. Nakwaski, Simplified thermal analysis of a laser diode array, str. 266-267, Luty 1984
     10.1070/QE1984v014n02ABEH004865 
  • W. Nakwaski, Dynamical thermal properties of stripe-geometry laser diodes, str. 94, 1984
     10.1049/ip-i-1.1984.0026 
  • W. Nakwaski, A. M. Kontkiewicz, Temperature distribution in a light-emitting diode during a pulse operation, str. 984, 1984
     10.1049/el:19840670 
  • W. Nakwaski, Static thermal properties of broad-contact double-heterostructure laser diodes, Opt. Quant. Electron. 15(6), 513-527, 1983
     10.1007/BF00620020 
  • W. Nakwaski, Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes, Opt. Quant. Electron. 15(4), 313-324, 1983
     10.1007/BF00619901 
  • W. Nakwaski, Simple formulas giving temperature profiles in active layer of stripe-geometry laser diode without oxide barriers, str. 368, 1983
     10.1049/el:19830255 
  • W. Nakwaski, Threshold current of oxide-insulated stripe laser diodes, str. 348-350, Marzec 1982
     10.1070/qe1982v012n03abeh012183 
  • W. Nakwaski, The thermal properties of a single-heterostructure laser diode supplied with short current pulses, Opt. Quant. Electron. 11(4), 319-327, 1979
     10.1007/BF00619365