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  • R. Sarzała, W. Nakwaski, Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region, Opt. Quant. Electron. 38(4-6), 293-311, 2006
  • R. Sarzała, W. Nakwaski, Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities, Opt. Quant. Electron. 38(4-6), 325-337, 2006
  • T. Czyszanowski, W. Nakwaski, Validity of Scalar Approaches to Radiation Modes of the GaAs-Based 1.3-μm Diode Lasers Designed for the Optical–Fibre Communication, Opt. Quant. Electron. 38(4-6), 349-360, 2006
  • R. Sarzała, W. Nakwaski, <title>Physics of an operation of vertical cavity surface emitting lasers with oxide apertures</title>, SPIE Proceedings, Poland, 25-29 Wrz 2006
  • M. Dems, W. Nakwaski, Modelling of High-Contrast Photonic Crystal Slabs Using the Novel Extension of the Effective Index Method, Opt. Appl. 36, 51-56, 2006
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  • M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. Sarzała, D. Lorenzen, J. Meusel, A. Kozłowska, Transient thermal properties of high- power diode laser bars., Appl. Phys. Lett. 89, 263506, 2006
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